[PDF] X Ray Scattering From Semiconductor Surfaces And Interfaces eBook

Author : Paul F Fewster
Publisher : World Scientific
Page : 315 pages
File Size : 38,30 MB
Release : 2003-07-07
Category : Technology & Engineering
ISBN : 178326098X

GET BOOK

This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces.A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.

Author : Peter S. Pershan
Publisher : Cambridge University Press
Page : 335 pages
File Size : 24,62 MB
Release : 2012-08-02
Category : Science
ISBN : 0521814014

GET BOOK

A practical guide for graduate students and researchers on all aspects of x-ray scattering experiments on liquid surfaces and interfaces.

Author : Winfried Mönch
Publisher : Springer Science & Business Media
Page : 455 pages
File Size : 46,90 MB
Release : 2013-04-17
Category : Technology & Engineering
ISBN : 3662031345

GET BOOK

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-included surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, results of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.

Author : Paul F Fewster
Publisher : World Scientific
Page : 303 pages
File Size : 41,53 MB
Release : 2000-10-27
Category : Science
ISBN : 1783262079

GET BOOK

X-ray scattering is used extensively to provide detailed structural information about materials. Semiconductors have benefited from X-ray scattering techniques as an essential feedback method for crystal growth, including compositional and thickness determination of thin layers. The methods have been developed to reveal very detailed structural information concerning material quality, interface structure, relaxation, defects, surface damage, etc.This book provides a thorough description of the techniques involved in obtaining that information, including X-ray diffractometers and their associated instrument functions, data collection methods, and the simulation of the diffraction patterns observed. Also presented are examples and procedures for interpreting the data to build a picture of the sample, much of which will be common to materials other than semiconductors./a

Author : Guy LeLay
Publisher : Springer Science & Business Media
Page : 399 pages
File Size : 18,62 MB
Release : 2012-12-06
Category : Science
ISBN : 3642729673

GET BOOK

The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.

Author : Bhupendra N Dev
Publisher : World Scientific
Page : 199 pages
File Size : 42,97 MB
Release : 2003-08-05
Category : Technology & Engineering
ISBN : 9814485217

GET BOOK

This book contains articles in several areas involving a dominant role of surfaces and interfaces. It is divided into four sections. The first section deals with theoretical and experimental aspects of the structure and morphology of clean surfaces and adsorbed layers on surfaces. The next section concerns growth on surfaces leading to semiconductor devices with quantum well, quantum wire and quantum dot structures; also deals with spin transport in 2DEG. Section 3 is on layered synthetic microstructures (LSMs). Analysis of interface roughness and layer composition of LSMs by X-ray techniques, fabrication of hard X-ray telescopes with LSMs, and diffusion across interfaces of LSMs are discussed here. The last section contains articles dealing with semiconductor surfaces exposed to ion beams and ion-irradiated semiconductor multilayers.

Author :
Publisher :
Page : 9 pages
File Size : 24,29 MB
Release : 1993
Category :
ISBN :

GET BOOK

A summary of research work performed from 11/1/86 to 4/10/93 is presented. Synchrotron x rays were used to probe the short-range-order (SRO) structures in these materials, especially layered semiconductors and high-{Tc} oxide superconductors. X-ray absorption fine structure spectroscopy, grazing incidence x-ray scattering and fluorescence, and total electron yield as probe for surfaces and interfaces were used. A new soft x-ray detector was developed.

Author : G.J. Davies
Publisher : Springer
Page : 184 pages
File Size : 48,32 MB
Release : 1994-03-31
Category : Science
ISBN :

GET BOOK

Several diverse but related topics concerned with semiconductor growth are brought together here, for the first time in a single text. Those studying semiconductor growth from any perspective will find this book invaluable and it will be essential reading for all in the semiconductor industry, whether in applications or in manufacturing.