[PDF] Ultrathin Gate Dielectrics For Ulsi Mos Applications eBook

Author : Takashi Hori
Publisher : Springer Science & Business Media
Page : 362 pages
File Size : 30,9 MB
Release : 2012-12-06
Category : Science
ISBN : 3642608566

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Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.

Author : Howard Huff
Publisher : Springer Science & Business Media
Page : 723 pages
File Size : 11,23 MB
Release : 2005-11-02
Category : Technology & Engineering
ISBN : 3540264620

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Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.

Author : Eric Garfunkel
Publisher : Springer Science & Business Media
Page : 503 pages
File Size : 44,12 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9401150087

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An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Author : Cor L. Claeys
Publisher : The Electrochemical Society
Page : 509 pages
File Size : 25,6 MB
Release : 2007
Category : Integrated circuits
ISBN : 1566775728

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The symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.

Author : H. R. Huff
Publisher :
Page : 650 pages
File Size : 50,99 MB
Release : 1999-09
Category : Technology & Engineering
ISBN :

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Device scaling has been the engine driving the continued pervasiveness of the microelectronics revolution. The SIA roadmap calls for 4-5nm films (oxide equivalent thickness) in 2000, and

Author : Arup Bhattacharyya
Publisher : CRC Press
Page : 512 pages
File Size : 42,18 MB
Release : 2017-07-06
Category : Technology & Engineering
ISBN : 1351798324

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The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.

Author : Gianfranco Pacchioni
Publisher : Springer Science & Business Media
Page : 619 pages
File Size : 17,85 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9401009449

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Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

Author : Dinesh C. Gupta
Publisher : ASTM International
Page : 172 pages
File Size : 43,96 MB
Release : 2000
Category : Dielectrics
ISBN : 0803126158

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Annotation Contains papers from a January 1999 conference held in San Jose, California, describing concepts and metrology of Gate Dielectric Integrity (GDI) and discussing its applications for material and device processes and tool qualification. Topics include methods, protocols, and reliability assessment as related to dielectric integrity. Papers are organized in sections on concepts, thin gate dielectrics, characterization and applications, and standardization. There is also a section summarizing panel discussions. Gupta is affiliated with Mitsubishi Silicon America. Brown is affiliated with Texas Instruments Inc. Annotation copyrighted by Book News, Inc., Portland, OR.