[PDF] Theoretical Investigations For Molecular Electronic Devices Metald Emiconductor Interfaces Capacitance Of Atomic Scale Wires And Organics On Diamond Surfaces eBook

Author : Khorgolkhuu Odbadrakh
Publisher :
Page : 103 pages
File Size : 38,28 MB
Release : 2007
Category :
ISBN : 9780549077572

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This thesis presents three different investigations of materials systems, with possible applications in the area of molecular electronics.

Author :
Publisher :
Page : pages
File Size : 26,41 MB
Release : 2004
Category :
ISBN :

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This thesis presents three different investigations of materials systems, with possible applications in the area of molecular electronics. Specifically, the binding of glycine, the simplest amino acid, to diamond surfaces, and the quantum transport characteristics of two prototypical metal/semiconductor interfaces are investigated. With density functional theory based simulations, we have investigated the binding of the amino acid glycine on two of the most prominent diamond surfaces, i.e. C(100) and C(111) (2x1)- with a focus on the associated energetics, charge transfer, electronic, and structural characteristics. With regards to the dimerized C(100) surface, interaction is mostly via the amide group of the glycine molecule (both with and without H-atom abstraction) and via a cycloaddition reaction whose activation barrier has been estimated via quantum chemistry methods. In contrast, the C(111) (2x1) surface was found to be mostly inert with respect to interactions with the glycine molecule. Second part of this thesis presents theoretical investigations of electronic transport devices at atomic scale. One such device is a capacitance made of atomic wires, for which we present the results of ab initio investigation of the capacitance of Al nanowires. The systems considered include cross sectional areas for the wires: Al(100)(3x3), Al(100)(5x5), and Al(100)(7x7). First principles estimates of capacitance matrix coefficients for the systems are provided. In the second part of this thesis, we have characterized the fully self-consistent electronic properties of a prototypical metal/nanotube interface using a combined nonequilibrium Greens function and density functional theory based formalism, under different conditions of gate and bias voltages. Both carbon and boron nitride nanotubes between Al electrodes, were considered. The electronic properties of the interface are dominated both by a dipole and by metal induced gap states (MIGS) formed through the transfer of.

Author : Harald Ibach
Publisher : Springer Science & Business Media
Page : 653 pages
File Size : 21,37 MB
Release : 2006-11-18
Category : Science
ISBN : 3540347100

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This graduate-level textbook covers the major developments in surface sciences of recent decades, from experimental tricks and basic techniques to the latest experimental methods and theoretical understanding. It is unique in its attempt to treat the physics of surfaces, thin films and interfaces, surface chemistry, thermodynamics, statistical physics and the physics of the solid/electrolyte interface in an integral manner, rather than in separate compartments. It is designed as a handbook for the researcher as well as a study-text for graduate students. Written explanations are supported by 350 graphs and illustrations.

Author : Dieter K. Schroder
Publisher : John Wiley & Sons
Page : 800 pages
File Size : 23,63 MB
Release : 2015-06-29
Category : Technology & Engineering
ISBN : 0471739065

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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Author : Cheol Seong Hwang
Publisher : Springer Science & Business Media
Page : 266 pages
File Size : 41,42 MB
Release : 2013-10-18
Category : Science
ISBN : 146148054X

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Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.