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This book provides a review of research on single-electron devices and circuits in silicon. It considers the design, fabrication, and characterization of single-electron transistors, single-electron memory devices, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. In all cases, a review of various device designs is provided, and in many cases, the devices developed during the author's own research work are used as detailed examples. An introduction to the physics of the single-electron charging effects is also provided.
This book reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. The book considers the design, fabrication, and characterization of single-electron transistors, single-electron memories, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. A review of the many different approaches used for the experimental realisation of these devices is provided and devices developed during the author''s own research are used as detailed examples. An introduction to the physics of single-electron charging effects is included. Sample Chapter(s). Chapter 1: Introduction (301 KB). Contents: Introduction; Single-Electron Charging Effects; Single-Electron Transistors in Silicon; Single-Electron Memory; Few-Electron Transfer Devices; Single-Electron Logic Circuits. Readership: Researchers, academics, and postgraduate students in nanoelectronics, nanofabrication, nanomaterials and nanostructures, quantum physics and electrical & electronic engineering.
CD-ROM contains SET analytical model MIB coded in C++, MATLAB, and Verilog-A language, allowing user to cosimulate and codesign hybrid CMOS-SET circuits. Numerous circuit examples are also provided.
Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Properties of nanosilicon in the form of nanoparticles, nanowires, nanotubes, and as porous material are of great interest. They can be used in finding suitable components for future miniature devices, and for the more exciting possibilities of novel optoelectronic applications due to bright luminescence from porous silicon, nanoparticles and nanowires. New findings from research into metal encapsulated clusters, silicon fullerenes and nanotubes have opened up a new paradigm in nanosilicon research and this could lead to large scale production of nanoparticles with control on size and shape as well as novel quasi one-dimensional structures. There are possibilities of using silicon as an optical material and in the development of a silicon laser. In Nanosilicon, leading experts cover state-of-the-art experimental and theoretical advances in the different forms of nanosilicon. Furthermore, applications of nanosilicon to single electron transistors, as photonic material, chemical and biological sensors at molecular scale, and silicon nanowire devices are also discussed. Self-assemblies of silicon nanoforms are important for applications. These developments are also related to cage structures of silicon in clathrates. With an interesting focus on the bottlenecks in the advancement of silicon based technology, this book provides a much-needed overview of the current state of understanding of nanosilicon research. Latest developments in nanoparticles, nanowires and nanotubes of silicon Focus on nanosilicon - a very timely subject attracting large interest Novel chapters on metal encapsulated silicon clusters and nanotubes
This volume includes highlights of the theories and experimental findings that underlie essential phenomena occurring in quantum-based devices and systems as well as the principles of operation of selected novel quantum-based electronic devices and systems. A number of the emerging approaches to creating new types of quantum-based electronic devices and systems are also discussed.
This volume includes highlights of the theories and experimental findings that underlie essential phenomena occurring in quantum-based devices and systems as well as the principles of operation of selected novel quantum-based electronic devices and systems. A number of the emerging approaches to creating new types of quantum-based electronic devices and systems are also discussed.
The field of single charge tunneling comprises of phenomena where the tunneling of a microscopic charge, usually carried by an electron or a Cooper pair, leads to macro scopically observable effects. The first conference entirely devoted to this new field was the NATO Advanced Study Institute on Single Charge Tunneling held in Les Hauches, France, March 5-15, 1991. This book contains a series of tutorial articles based on lectures presented at the meeting. It was intended to provide both an introduction for nonexperts and a valuable reference summarizing the state of the art of single charge tun neling. A complementary publication with contributions by participants of the NATO Advanced Study Institute is the Special Issue on Single Charge Tunneling of Zeitschrift für Physik B, Vol. 85, pp. 317-468 (1991 ). That issue with original papers provides a snapshot af the leading edge of current research in the field. The success of the meeting and the publicatian of this volume was made possible through the generaus support af the NATO Scientific A:ffairs Division, Brussels, Belgium. The Centre de Physique des Hauches has provided a superbly situated conference site and took care af many lacal arrangements. Both far the preparation of the conference and the handling af some manuscripts the suppart af the Centre d 'Etudes de Saclay was essential. The editing of the proceedings volume would not have been passible without the dedicated efforts of Dr. G. -1. Ingald, who tailared a 1\.
Technological advancement in chip development, primarily based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. For example, when the number of electrons in a device's active region is reduced to less than ten electrons (or holes), quantum fluctuation errors will occur, and when gate insulator thickness becomes too insignificant to block quantum mechanical tunneling, unacceptable leakage will occur. Fortunately, there is truth in the old adage that whenever a door closes, a window opens somewhere else. In this case, that window opening is nanotechnology. Silicon Nanoelectronics takes a look at at the recent development of novel devices and materials that hold great promise for the creation of still smaller and more powerful chips. Silicon nanodevices are positoned to be particularly relevant in consideration of the existing silicon process infrastructure already in place throughout the semiconductor industry and silicon's consequent compatibility with current CMOS circuits. This is reinforced by the nearly perfect interface that can exist between natural oxide and silicon. Presenting the contributions of more than 20 leading academic and corporate researchers from the United States and Japan, Silicon Nanoelectronics offers a comprehensive look at this emergent technology. The text includes extensive background information on the physics of silicon nanodevices and practical CMOS scaling. It considers such issues as quantum effects and ballistic transport and resonant tunneling in silicon nanotechnology. A significant amount of attention is given to the all-important silicon single electron transistors and the devices that utilize them. In offering an update of the current state-of-the-art in the field of silicon nanoelectronics, this volume serves well as a concise reference for students, scientists, engineers, and specialists in various fields, in