[PDF] Single Electron Devices And Circuits Design eBook

Author : Zahid Ali Khan Durrani
Publisher : World Scientific
Page : 300 pages
File Size : 46,51 MB
Release : 2010
Category : Mathematics
ISBN : 1848164149

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This book reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. The book considers the design, fabrication, and characterization of single-electron transistors, single-electron memories, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. A review of the many different approaches used for the experimental realisation of these devices is provided and devices developed during the author''s own research are used as detailed examples. An introduction to the physics of single-electron charging effects is included. Sample Chapter(s). Chapter 1: Introduction (301 KB). Contents: Introduction; Single-Electron Charging Effects; Single-Electron Transistors in Silicon; Single-Electron Memory; Few-Electron Transfer Devices; Single-Electron Logic Circuits. Readership: Researchers, academics, and postgraduate students in nanoelectronics, nanofabrication, nanomaterials and nanostructures, quantum physics and electrical & electronic engineering.

Author : Santanu Mahapatra
Publisher : Artech House Publishers
Page : 252 pages
File Size : 14,69 MB
Release : 2006
Category : Technology & Engineering
ISBN :

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CD-ROM contains SET analytical model MIB coded in C++, MATLAB, and Verilog-A language, allowing user to cosimulate and codesign hybrid CMOS-SET circuits. Numerous circuit examples are also provided.

Author : Hamendra Singh Jatav
Publisher : LAP Lambert Academic Publishing
Page : 60 pages
File Size : 43,89 MB
Release : 2012
Category :
ISBN : 9783845428925

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This comprehensive contains text covering basics of Single Electron Transistor. It provides analysis of Single Electron Transistor (SET) and SET based logic design. The text dealt in this book develops some important techniques of full adder design with SET as a basic building block instead of CMOS or other logic. The techniques discussed proves better results in terms of voltage gain and other parameters.

Author : Jaap Hoekstra
Publisher : CRC Press
Page : 349 pages
File Size : 16,25 MB
Release : 2016-10-14
Category : Science
ISBN : 981474557X

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Today, the concepts of single-electron tunneling (SET) are used to understand and model single-atom and single-molecule nanoelectronics. The characteristics of nanoelectronic devices, especially SET transistors, can be understood on the basis of the physics of nanoelectronic devices and circuit models. A circuit theory approach is necessary for considering possible integration with current microelectronic circuitry. To explain the properties and possibilities of SET devices, this book follows an approach to modeling these devices using electronic circuit theory. All models and equivalent circuits are derived from the first principles of circuit theory. Based on energy conservation, the circuit model of SET is an impulsive current source, and modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a single junction. In addition, this edition differs from the previous one by elaborating on the section on spice simulations and providing a spice simulation on the SET electron box circuit, including the spice netlist. Also, a complete, new proof of the two-capacitor problem in circuit theory is presented; the importance of this proof in understanding energy conservation in SET circuits cannot be underestimated. This book will be very useful for advanced undergraduate- and graduate-level students of electrical engineering and nanoelectronics and researchers in nanotechnology, nanoelectronic device physics, and computer science. Only book modeling both single-electron tunneling and many electron tunneling from the points of view of electronics; starting from experiments, via a physics description, working towards a circuit description; and based on energy conservation, in electrical circuits, developing the impulse circuit model for single-electron tunneling.

Author : Jaap Hoekstra
Publisher : CRC Press
Page : 332 pages
File Size : 16,13 MB
Release : 2016-10-14
Category : Science
ISBN : 131534081X

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Today, the concepts of single-electron tunneling (SET) are used to understand and model single-atom and single-molecule nanoelectronics. The characteristics of nanoelectronic devices, especially SET transistors, can be understood on the basis of the physics of nanoelectronic devices and circuit models. A circuit theory approach is necessary for considering possible integration with current microelectronic circuitry. To explain the properties and possibilities of SET devices, this book follows an approach to modeling these devices using electronic circuit theory. All models and equivalent circuits are derived from the first principles of circuit theory. Based on energy conservation, the circuit model of SET is an impulsive current source, and modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a single junction. In addition, this edition differs from the previous one by elaborating on the section on spice simulations and providing a spice simulation on the SET electron box circuit, including the spice netlist. Also, a complete, new proof of the two-capacitor problem in circuit theory is presented; the importance of this proof in understanding energy conservation in SET circuits cannot be underestimated. This book will be very useful for advanced undergraduate- and graduate-level students of electrical engineering and nanoelectronics and researchers in nanotechnology, nanoelectronic device physics, and computer science. Only book modeling both single-electron tunneling and many electron tunneling from the points of view of electronics; starting from experiments, via a physics description, working towards a circuit description; and based on energy conservation, in electrical circuits, developing the impulse circuit model for single-electron tunneling.

Author : Christoph Wasshuber
Publisher : Springer Science & Business Media
Page : 296 pages
File Size : 19,19 MB
Release : 2001-06-29
Category : Technology & Engineering
ISBN : 9783211835586

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From the reviews: "This is a well written book offering a clear and detailed insight into physical processes and numerical procedures essential to the single-electron dynamics in electro-conducting media." Zentralblatt für Mathematik und ihre Grenzgebiete

Author : Mayank Bhatnagar
Publisher :
Page : 266 pages
File Size : 26,15 MB
Release : 2008
Category : Electric circuits
ISBN :

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Single Electronics is the ability to control the movement of single electrons in a circuit. The single electron devices are expected to allow much higher densities of circuits than presently possible while permitting very low power applications. The devices available in literature do not conform to the conventional CMOS process and a resultant high investment for a new technology is blocking the progress of this field. We have proposed a simple design which is fully compliant with the contemporary CMOS process. Novel CMOS designs are implemented to allow measurement of the feeble output from SEDs. The existing circuit model for the single electron device are discussed and compared. A new model for the device is proposed which is a natural charge based model. A couple of new circuit designs are presented which use the SED, not as a switch but with its higher order functionality of quantizing charge.

Author : Jaap Hoekstra
Publisher : CRC Press
Page : 308 pages
File Size : 10,85 MB
Release : 2009-10-31
Category : Science
ISBN : 9814241636

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This book examines single-electron circuits as an introduction to the rapidly expanding field of nanoelectronics. It discusses both the analysis and synthesis of circuits with the nanoelectronic metallic single-electron tunneling (SET) junction device. The basic physical phenomena under consideration are the quantum mechanical tunneling of electron

Author : Atul. P. Godse
Publisher : Technical Publications
Page : 460 pages
File Size : 32,62 MB
Release : 2020-11-01
Category : Technology & Engineering
ISBN : 9333223495

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The book covers all the aspects of theory, analysis, and design of Electron Devices and Circuits for the undergraduate course. The concepts of p-n junction devices, BJT, JFET, MOSFET, electronic devices including UJT, thyristors, IGBT, Amplifier circuits-BJT, JFET and MOSFET amplifiers, multistage and differential amplifiers, feedback amplifiers, and oscillators are explained comprehensively. The book explains various p-n junction devices, including diode, LED, laser diode, Zener diode, and Zener diode regulator. The different types of rectifiers are explained in support. The book covers the construction, operation, and characteristics of BJT, JFET, MOSFET, UJT, Thyristors - SCR, Diac and Triac, and IGBT. It explains the biasing of BJT, JFET, and MOSFET amplifiers, basic BJT, JFET, and MOSFET amplifiers with h-parameters and r-parameters equivalent circuits, multistage amplifiers, differential amplifiers, BiCMOS amplifier, single tuned amplifiers, neutralization methods, power amplifiers, and frequency response. Finally, the book incorporates a detailed discussion of the analysis of the current series, voltage series, current shunt, and voltage shunt feedback amplifiers. The book also includes the discussion of the Barkhausen criterion for oscillations and the detailed analysis of various oscillator circuits, including RC phase shift, Wien bridge, Hartley, Colpitt‘s, Clapp, and crystal oscillators. The book uses straightforward and lucid language to explain each topic. The book provides the logical method of describing the various complicated issues and stepwise methods to make understanding easy. The variety of solved examples is the feature of this book. The book explains the subject's philosophy, which makes understanding the concepts evident and makes the subject more interesting.

Author : Joachim N. Burghartz
Publisher : John Wiley & Sons
Page : 637 pages
File Size : 49,1 MB
Release : 2013-03-19
Category : Technology & Engineering
ISBN : 1118517539

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Winner, 2013 PROSE Award, Engineering and Technology Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society.