[PDF] Silicon Carbide And Related Materials 2015 eBook

Author : Fabrizio Roccaforte
Publisher : Trans Tech Publications Ltd
Page : 1264 pages
File Size : 16,48 MB
Release : 2016-05-24
Category : Technology & Engineering
ISBN : 3035730423

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This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene. The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies. The papers are grouped as follows: Chapter 1: SiC Growth Chapter 2: SiC Theory and Characterization Chapter 3: SiC Processing Chapter 4: SiC Devices

Author : Fabrizio Roccaforte
Publisher :
Page : 0 pages
File Size : 36,41 MB
Release : 2016
Category : Silicon carbide
ISBN : 9783035710427

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This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene.The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.The papers are grouped as follows:Chapter 1: SiC GrowthChapter 2: SiC Theory and CharacterizationChapter 3: SiC ProcessingChapter 4: SiC DevicesChapter 5: Related Materials Silicon Carbide, Wide Bandgap Semiconductor, Bulk Growth of SIC, Epitaxial Growth of SIC, Processing of SIC, SIC Devices, Power Electronics, MOS, Characterization, Graphene, III-Nitrides Materials Science.

Author : Didier Chaussende
Publisher : Trans Tech Publications Ltd
Page : 1078 pages
File Size : 15,82 MB
Release : 2015-06-30
Category : Technology & Engineering
ISBN : 3038269433

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Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

Author : Zhe Chuan Feng
Publisher : CRC Press
Page : 465 pages
File Size : 33,18 MB
Release : 2023-07-10
Category : Science
ISBN : 0429583958

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This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

Author : Robert P. Devaty
Publisher : Trans Tech Publications Ltd
Page : 1670 pages
File Size : 41,12 MB
Release : 2006-10-15
Category : Technology & Engineering
ISBN : 3038130532

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Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Author : Hiroshi Yano
Publisher : Trans Tech Publications Ltd
Page : 1196 pages
File Size : 31,83 MB
Release : 2020-07-28
Category : Science
ISBN : 3035735794

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Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019) Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan

Author : Michael G. Spencer
Publisher : CRC Press
Page : 768 pages
File Size : 32,85 MB
Release : 1994-06-29
Category : Art
ISBN :

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USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap compounds which feature similar characteristics. Applications include high temperature ultra-violet lasers, photodiodes, photodetectors, blue LEDs, high power microwave applications in radar and transmitter devices Special sale to delegates 200 @ 35 Previous volumes in series published by Springer Leading workers in field include Pavlidis (MIT) and Choyke (Pittsburgh, Dept Phys) Feng author is also presenting paper Research in this area is expanding

Author : Konstantinos Zekentes
Publisher : Trans Tech Publications Ltd
Page : 796 pages
File Size : 19,75 MB
Release : 2017-05-15
Category : Technology & Engineering
ISBN : 3035730431

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Selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece