Author : Hajime Okumura
Publisher :
Page : 1246 pages
File Size : 24,59 MB
Release : 2014
Category :
ISBN :
The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. The 283 papers are grouped as follows: Chapter 1: SiC Bulk Growth; Chapter 2: SiC Epitaxial Growth; Chapter 3: Physical Properties and Characterization of SiC; Chapter 4: Processing of SiC; Chapter 5: Devices and Circuits; Chapter 6: Related Materials. Keyword: bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application, graphene, III-nitrides and related materials The 270 contributed and 13 invited papers report recent research on the wide bandgap semiconductor silicon carbide (SiC) in terms of bulk growth, epitaxial growth, physical properties and characterization, processing, devices and circuits, and related materials. Among individual topics are the crystal growth of highly oriented SiC by chemical vapor deposition with alternating gas supply, correlation between microwave reflectivity and excess carrier concentrations in 4H-SiC, the microstructural analysis of a damaged layer introduced during chemo-mechanical polishing, experimental studies of water vapor plasma oxidation and thermal oxidation of 4H-SiC (0001) for clarifying the atomic-flattening mechanisms in plasma-assisted polishing, a low-cost implantation process with high heat resistant photoresist in fabricating silicon carbide devices, the cryogenic testing and characterization of SiC diodes, modeling high-performance 4H-SiC emitter coupled logic circuits, and high-efficiency power conversion using silicon carbide power electronics. The two volumes are paged and indexed together. -- Materials science-- Materials science -- Carbon-- Materials science -- Ceramics-- Materials science -- Composite materials-- Solid state materials and hard matter.