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Semiconductor Nanowires II: Properties and Applications

Author :
Publisher : Academic Press
Page : 424 pages
File Size : 45,50 MB
Release : 2016-01-11
Category : Technology & Engineering
ISBN : 0128041447

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Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. Includes experts contributors who review the most important recent literature Contains a broad view, including examination of semiconductor nanowires

Semiconductor Nanowires

Author : J Arbiol
Publisher : Elsevier
Page : 573 pages
File Size : 17,47 MB
Release : 2015-03-31
Category : Technology & Engineering
ISBN : 1782422633

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Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. Explores a selection of advanced materials for semiconductor nanowires Outlines key techniques for the property assessment and characterization of semiconductor nanowires Covers a broad range of applications across a number of fields

Fundamental Properties of Semiconductor Nanowires

Author : Naoki Fukata
Publisher : Springer Nature
Page : 454 pages
File Size : 14,53 MB
Release : 2020-11-16
Category : Technology & Engineering
ISBN : 9811590508

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This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires’ growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functionalization: nanowires have a high surface-to-volume ratio and thus are well-suited to surface modification, which effectively functionalizes them. The book also discusses the latest advances in the study of impurity doping, a crucial process in nanowires. In addition, considerable attention is paid to characterization techniques such as nanoscale and in situ methods, which are indispensable for understanding the novel properties of nanowires. Theoretical calculations are also essential to understanding nanowires’ characteristics, particularly those that derive directly from their special nature as one-dimensional nanoscale structures. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.

Novel Compound Semiconductor Nanowires

Author : Fumitaro Ishikawa
Publisher : CRC Press
Page : 549 pages
File Size : 41,95 MB
Release : 2017-10-17
Category : Science
ISBN : 9814745774

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One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices

Author : Joao B. Sousa
Publisher : Elsevier
Page : 484 pages
File Size : 34,93 MB
Release : 2021-03-26
Category : Science
ISBN : 0323460976

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Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices offers a pragmatic view on transport phenomena for micro- and nanoscale materials and devices, both as a research tool and as a means to implant new functions in materials. Chapters emphasize transport properties (TP) as a research tool at the micro/nano level and give an experimental view on underlying techniques. The relevance of TP is highlighted through the interplay between a micro/nanocarrier's characteristics and media characteristics: long/short-range order and disorder excitations, couplings, and in energy conversions. Later sections contain case studies on the role of transport properties in functional nanomaterials. This includes transport in thin films and nanostructures, from nanogranular films, to graphene and 2D semiconductors and spintronics, and from read heads, MRAMs and sensors, to nano-oscillators and energy conversion, from figures of merit, micro-coolers and micro-heaters, to spincaloritronics. Presents a pragmatic description of electrical transport phenomena in micro- and nanoscale materials and devices from an experimental viewpoint Provides an in-depth overview of the experimental techniques available to measure transport phenomena in micro- and nanoscale materials Features case studies to illustrate how each technique works Highlights emerging areas of interest in micro- and nanomaterial transport phenomena, including spintronics

Nanowires and Nanobelts

Author : Zhong Lin Wang
Publisher : Springer Science & Business Media
Page : 482 pages
File Size : 34,81 MB
Release : 2013-06-05
Category : Technology & Engineering
ISBN : 0387287450

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Volume 1, Metal and Semiconductor Nanowires covers a wide range of materials systems, from noble metals (such as Au, Ag, Cu), single element semiconductors (such as Si and Ge), compound semiconductors (such as InP, CdS and GaAs as well as heterostructures), nitrides (such as GaN and Si3N4) to carbides (such as SiC). The objective of this volume is to cover the synthesis, properties and device applications of nanowires based on metal and semiconductor materials. The volume starts with a review on novel electronic and optical nanodevices, nanosensors and logic circuits that have been built using individual nanowires as building blocks. Then, the theoretical background for electrical properties and mechanical properties of nanowires is given. The molecular nanowires, their quantized conductance, and metallic nanowires synthesized by chemical technique will be introduced next. Finally, the volume covers the synthesis and properties of semiconductor and nitrides nanowires.

Advances in Semiconductor Nanostructures

Author : Alexander V. Latyshev
Publisher : Elsevier
Page : 553 pages
File Size : 20,90 MB
Release : 2016-11-10
Category : Technology & Engineering
ISBN : 0128105135

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Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Nanoelectronics

Author : Joachim Knoch
Publisher : Walter de Gruyter GmbH & Co KG
Page : 468 pages
File Size : 42,15 MB
Release : 2024-03-18
Category : Science
ISBN : 311105442X

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In recent years, nanoelectronics has become very interdisciplinary requiring students to master aspects of physics, electrical engineering, chemistry etc. The 2nd edition of this textbook is a comprehensive overview of nanoelectronics covering the necessary quantum mechanical and solid-state physics foundation, an overview of semiconductor fabrication as well as a brief introduction into device simulation using the non-equilibrium Greens function formalism. Equipped with this, the work discusses nanoscale field-effect transistors and alternative device concepts such as Schottky-barrier MOSFETs as well as steep slope transistors based on different materials. In addition, cryogenic operation of MOSFETs for the realization of, e.g., classical control electronics of semiconducting spin qubits is studied. The work contains a number of tasks, examples and exercises with step-by-step video solutions as well as tutorial videos that deepen the understanding of the material. With additional access to simulation tools that allow students to do computational experiments, the emphasis is on thorough explanation of the material enabling students to carry out their own research.