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A comprehensive account of the properties, growth and applications of semiconducting transparent thin films, this book provides a single source reference for researchers in the field. It discusses the underlying physics of such films, and their commercial applications in such areas as gas sensors and temperature control coatings in the aerospace industry. It is clearly written, with sections on the different materials, different growth techniques, electrical properties, optical properties, and selected applications, for coatings, sensors, detectors and display devices. It is a valuable reference tool for the established researcher, and provides a comprehensive introcution to the subject for graduates of electrical and electronic engineering. The international team of authors, under the leadership of one of the world's authorities on the subject have written a book which has become the standard work in the field.
Symposium R, "Oxide Semiconductors" was held December 1-6 at the 2013 MRS Fall Meeting in Boston, Massachusetts. Oxide semiconductors are poised to take a more active role in modern electronics, particularly in the field of thin film transistors. While many advances have been made in terms of our understanding of fundamental optical and electronic characteristics, there remain many questions in terms of defects, doping, and optimal growth/synthesis conditions. This symposium proceedings volume represents recent advances in growth and characterization of a number of different oxide semiconductors, as well as device fabrication.
Copper based delafossite transparent semiconducting oxide thin films have recently gained tremendous interest in the field of optoelectronic technology, after the discovery of p-type conductivity in a transparent thin film of copper aluminium oxide (CuAlO2). Most of the well-known and widely used transparent conducting oxide thin films such as ZnO, SnO2, ITO etc. and their doped versions are n-type material, but corresponding p-type transparent conducting oxides were surprisingly missing for a long time until the fabrication of above-mentioned p-CuAlO2 thin film have been published (Nature 1997, 389, 939). This has opened up a new field in opto-electronics device technology, the so-called "Transparent Electronics", where a combination of the two types of transparent conducting oxides in the form of a p-n junction could lead to a 'functional' window, which transmits visible portion of solar radiation yet generates electricity by the absorption of UV part of it. Non-stoichiometric and doped versions of various new types of p-type transparent conducting oxides with improved optical and electrical properties have been synthesised in the last few years in this direction. Wide range of deposition techniques have been adopted to prepare the films. But fabrication of device quality films by cost-effective deposition techniques such as sputtering, chemical vapour deposition, wet-chemical dip-coating technique etc. are the need of the hour for large-scale production of these films for diverse device applications. Here the authors have discussed the fabrication and opto-electrical characterisation of p-CuAlO2+x thin films by cost-effective and scalable deposition routes such as sputtering and wet-chemical dip-coating technique. The authors have also discussed briefly some of the new developments in the field of p-type transparent conducting oxide thin film technology and an up-to-date and comprehensive description of different Cu-based p-type transparent conducting oxide thin films is presented. Also the origin of p-type conductivity in these transparent oxides has been dealt with considerable attention. Fabrication of all-transparent junctions is also discussed which is most important in the development of 'Transparent Electronics'. Field emission properties of thin films are currently of much interest due to the potential application in field emission displays (FEDs), which are considered to be strong candidate for low-power panel applications. The low-threshold field emission properties of wide-bandgap CuAlO2 thin films have been investigated for its potential applications in FED technology. The films showed considerable low turn-on field. This finding might open up a new direction in the field-emission technology, and a new group of materials (such as, different transparent conducting oxides) might become a promising candidate for low-threshold field emitter. Also, recently, the research on nanostructured materials generates great interest in the scientific community and offers tremendous opportunities in the field of science and technology. Here, the authors have also discussed in brief, the formation of nanocrystalline p-CuAlO2 films, which may open up an extremely important and interesting field of research for the fabrication of all-transparent nano-active devices. This will not only give a new dimension in the field of 'Transparent Electronics', but new avenues may open up in the nanoparticle research keeping an eye on its tremendous applications in optoelectronics technology.
Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.
Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the atleast two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.
This book discusses various aspects of different bulk TSO single crystals in terms of thermodynamics; bulk crystal growth using diverse techniques involving gas phase, solution, and melt; and the resulting crystal size, appearance, and structural quality as well as the fundamental properties that were gathered from bulk single crystals. It presents experimental results accompanied by theoretical results, such as band structure and native defects. Combinations of various bulk single crystals along with their properties show great promise in practical device functionality and fabrication. Many TSO-based devices have already been demonstrated in several technical areas, including electronics, optoelectronics, and photovoltaics as well as sensing devices. The book is the first of its kind that brings together a variety of bulk single crystals of scientifically and technically important TSOs along with their properties, which may result in novel devices with unique functionalities.
The explosive growth in the semiconductor industry has caused a rapid evolution of thin film materials that lend themselves to the fabrication of state-of-the-art semiconductor devices. Early in the 1960s an old research technique named chemical vapour phase deposition (CVD), which has several unique advantages, developed into the most widely used technique for thin film preparation in electronics technology. In the last 25 years, tremendous advances have been made in the science and technology of thin films prepared by means of CVD. This book presents in a single volume, an up-to-date overview of the important field of CVD processes which has never been completely reviewed previously. Contents: Part I. 1. Evolution of CVD Films. Introductory remarks. Short history of CVD thin films. II. Fundamentals. 2. Techniques of Preparing Thin Films. Electrolytic deposition techniques. Vacuum deposition techniques. Plasma deposition techniques. Liquid-phase deposition techniques. Solid-phase deposition techniques. Chemical vapour conversion of substrate. Chemical vapour deposition. Comparison between CVD and other thin film deposition techniques. 3. Chemical Processes Used in CVD. Introduction. Description of chemical reactions used in CVD. 4. Thermodynamics of CVD. Feasibility of a CVD process. Techniques for equilibrium calculations in CVD systems. Examples of thermodynamic studies of CVD systems. 5. Kinetics of CVD. Steps and control type of a CVD heterogeneous reaction. Influence of experimental parameters on thin film deposition rate. Continuous measurement of the deposition rate. Experimental methods for studying CVD kinetics. Role of homogeneous reactions in CVD. Mechanism of CVD processes. Kinetics and mechanism of dopant incorporation. Transport phenomena in CVD. Status of kinetic and mechanism investigations in CVD systems. 6. Measurement of Thin Film Thickness. Mechanical methods. Mechanical-optical methods. Optical methods. Electrical methods. Miscellaneous methods. 7. Nucleation and Growth of CVD Films. Stages in the nucleation and growth mechanism. Regimes of nucleation and growth. Nucleation theory. Dependence of nucleation on deposition parameters. Heterogeneous nucleation and CVD film structural forms. Homogeneous nucleation. Experimental techniques. Experimental results of CVD film nucleation. 8. Thin Film Structure. Techniques for studying thin film structure. Structural defects in CVD thin films. 9. Analysis of CVD Films. Analysis techniques of thin film bulk. Analysis techniques of thin film surfaces. Film composition measurement. Depth concentration profiling. 10. Properties of CVD Films. Mechanical properties. Thermal properties. Optical properties. Photoelectric properties. Electrical properties. Magnetic properties. Chemical properties. Part III. 11. Equipment and Substrates. Equipment for CVD. Safety in CVD. Substrates. 12. Preparation and Properties of Semiconducting Thin Films. Homoepitaxial semiconducting films. Heteroepitaxial semiconducting films. 13. Preparation and Properties of Amorphous Insulating Thin Films. Oxides. Nitrides and Oxynitrides. Polymeric thin films. 14. Preparation and Properties of Conductive Thin Films. Metals and metal alloys. Resistor materials. Transparent conducting films. Miscellaneous materials. 15. Preparation and Properties of Superconducting and Magnetic Thin Films. Superconducting materials. Magnetic materials. 16. Uses of CVD Thin Films. Applications in electronics and microelectronics. Applications in the field of microwaves and optoelectronics. Miscellaneous applications. Artificial heterostructures (Quantum wells, superlattices, monolayers, two-dimensional electron gases). Part V. 17. Present and Future Importance of CVD Films.
In this work, we investigate the realization of p-type CuInOx thin films by RF magnetron sputtering using Cu2O: In2O3 target and study the effects of (i) post-deposition annealing and (ii) substrate heating during a deposition for controlling the optoelectronic and morphological properties. In the first part of the study, post-process annealing of the deposited films was performed at temperatures ranging from 100-900°C in O2 ambiance. The X-ray diffraction (XRD) analysis performed on the samples identified the presence of Cu2In2O5 phases along with CuInO2 or In2O3 for the films annealed above 500°C. A morphological study performed using SEM shows the crystallization and the grain growth with an increase in the annealing temperatures. Optical studies carried out on the films indicated a small bandgap change in the range of 3.4-3.6 eV during annealing.
The challenge for producing “invisible” electronic circuitry and opto-electronic devices is that the transistor materials must be transparent to visible light yet have good carrier mobilities. This requires a special class of materials having “contra-indicated properties” because from the band structure point of view, the combination of transparency and conductivity is contradictory. Structured to strike a balance between introductory and advanced topics, this monograph juxtaposes fundamental science and technology / application issues, and essential materials characteristics versus device architecture and practical applications. The first section is devoted to fundamental materials compositions and their properties, including transparent conducting oxides, transparent oxide semiconductors, p-type wide-band-gap semiconductors, and single-wall carbon nanotubes. The second section deals with transparent electronic devices including thin-film transistors, photovoltaic cells, integrated electronic circuits, displays, sensors, solar cells, and electro-optic devices. Describing scientific fundamentals and recent breakthroughs such as the first “invisible” transistor, Transparent Electronics: From Synthesis to Applications brings together world renowned experts from both academia, national laboratories, and industry.