[PDF] Proceedings Of The 5th International Conference On Nitride Semiconductors Icns 5 eBook

Author : Hiroshi Amano
Publisher : Wiley-VCH
Page : 0 pages
File Size : 23,8 MB
Release : 2004-03-26
Category : Science
ISBN : 9783527404896

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physica status solidi (c) conferences and critical reviews publishes conference proceedings, ranging from large international meetings to specialized topical workshops as well as collections of topical reviews on various areas of current solid state physics research. The Fifth International Conference on Nitride Semiconductors (ICNS-5) was held at Nara-Ken New Public Hall in Nara,Japan,on May 25-30,2003. This conference series focuses on recent advances in GaN and related materials. It covers scientific and technological developments associated with these materials, their processing and devices. The objective of this conference is to provide a forum for active nitride researchers to exchange their knowledge by presenting their latest results and by carrying out in-depth technical discussions. This conference follows the tradition of the four previous conferences and will focus on all aspects of nitride semiconductor systems, which include compounds involving AlInGaN, GaNAsP, AlSiCN and other materials containing nitrogen as one of the major constituents.

Author : Fernando A. Ponce
Publisher : Wiley-VCH
Page : 0 pages
File Size : 23,17 MB
Release : 2002-04-05
Category : Science
ISBN : 9783527403479

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All aspects of nitride semiconductor systems and related materials are presented in these proceedings of the Fourth International Conference on Nitride Semiconductors (ICNS-4). Active nitride researchers present their latest results on all aspects of nitride semiconductor systems, which include compounds involving AlInGaN, GaNAsP, AlSiCN and other materials containing nitrogen as one of the major constituents. The authors cover scientific and technological developments associated with these materials, their processing and devices; for technological areas such as optoelectronics, high temperature electronics, etc. ICNS-4 is held in Denver, Colorado, in 2001 and follows the ICNS-1 held in Boston and Nagoya (1995); ICNS-2 in Tokushima, Japan; and ICNS-3 in Montpellier, France (1999). The topical areas included are as follows: - Synthesis (substrates, precursors, bulk crystals, epitaxy, doping, heterostructures, regrowht, alloys) - Fundamental Science (band structure, modeling of physical properties, quantum size effect, strain effect, surface phenomena) - Characterization (determination of the structural, electrical, optical, etc. properties) - Processing (etching (dry, wet), cleaving, high reflection coatings, ohmic, contacts, Schottky contacts) - Devices (optoelectronics, high power, and high temperature, applications)