[PDF] Plasma Sources For Thin Film Deposition And Etching eBook

Author : Maurice H. Francombe
Publisher : Academic Press
Page : 343 pages
File Size : 48,66 MB
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 0080925138

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This latest volume of the well-known Physics of Thin Films Series includes four chapters that discuss high-density plasma sources for materials processing, electron cyclotron resonance and its uses, unbalancedmagnetron sputtering, and particle formation in thin film processing plasma. Chapter One develops a unified framework from which all "high-efficiency" sources may be viewed and compared; outlines key elements of source design affecting processing results; and highlights areas where additional research and development are needed Chapter Two reviews and analyzes the main types of electron cyclotron resonance (ECR) plasma sources suitable for ECR PACVD of thin films, mainly ECR sources using magnet coils Chapter Three examines the benefits and limitations of the new technique, unbalanced magnetron sputtering (UBM), along with the motivation for its development, the basic principles of its operation and commercial applications, and some speculations regarding the future of UBM technology Chapter Four describes general phenomena observed in connection with particle formation in thin film processing plasmas; discusses particles in PECVD plasmas, sputtering plasmas, and RIE plasmas; presents an overview of the theoretical modeling of various aspects of particles in processing plasmas; examines issues of equipment design affecting particle formation; and concludes with remarks about the implications of this work for the control of process-induced particle contamination

Author : Maurice H. Francombe
Publisher : Academic Press
Page : 0 pages
File Size : 39,24 MB
Release : 1994-08-18
Category : Technology & Engineering
ISBN : 9780125330183

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This latest volume of the well-known Physics of Thin Films Series includes four chapters that discuss high-density plasma sources for materials processing, electron cyclotron resonance and its uses, unbalancedmagnetron sputtering, and particle formation in thin film processing plasma.

Author : Oleg A. Popov
Publisher :
Page : 445 pages
File Size : 43,37 MB
Release : 1995
Category : Electronic books
ISBN : 9786612253218

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This book describes the design, physics, and performance of high density plasma sources which have been extensively explored in low pressure plasma processing, such as plasma etching and planarization, plasma enhanced chemical vapor deposition of thin films, sputtered deposition of metals and dielectrics, epitaxial growth of silicon and GaAs, and many other applications. This is a comprehensive survey and a detailed description of most advanced high density plasma sources used in plasma processing.

Author : Oleg A. Popov
Publisher : Elsevier
Page : 467 pages
File Size : 38,23 MB
Release : 1996-12-31
Category : Science
ISBN : 0815517890

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This book describes the design, physics, and performance of high density plasma sources which have been extensively explored in low pressure plasma processing, such as plasma etching and planarization, plasma enhanced chemical vapor deposition of thin films, sputtered deposition of metals and dielectrics, epitaxial growth of silicon and GaAs, and many other applications. This is a comprehensive survey and a detailed description of most advanced high density plasma sources used in plasma processing. The book is a balanced presentation in that it gives both a theoretical treatment and practical applications. It should be of considerable interest to scientists and engineers working on plasma source design, and process development.

Author : J.J. Pouch
Publisher : Trans Tech Publications Ltd
Page : 749 pages
File Size : 37,34 MB
Release : 1993-10-28
Category : Technology & Engineering
ISBN : 3035704805

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Containing 42 invited papers, this fine book covers a broad range of subjects on plasmas and applications. In the first section, plasma properties and methods used to characterize the plasma are addressed. Many of these papers also cover deposition or etching of particular materials. The second part focuses on the application of various plasma techniques used to deposit thin films, and on the resulting film properties. Finally, the application of plasma etching to the fabrication of silicon-based circuits, plasma etching of III-V compound semiconductors and other processing applications are discussed in the third and last section.

Author : H. Schlüter
Publisher : Springer Science & Business Media
Page : 592 pages
File Size : 27,48 MB
Release : 1999-02-28
Category : Science
ISBN : 9780792356424

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This book draws together three areas of work on plasma technologies: advanced efforts based on wave generated, high frequency plasmas, plasma assisted ion implantation, and electron beam generated plasma. It lays a foundation for the application of sources in industry and various research areas

Author : John L. Vossen
Publisher : Elsevier
Page : 577 pages
File Size : 10,14 MB
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 0323138985

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Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

Author : Professor K.S. K.S Sree Harsha
Publisher : Elsevier
Page : 1173 pages
File Size : 11,85 MB
Release : 2005-12-16
Category : Technology & Engineering
ISBN : 0080480314

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The goal of producing devices that are smaller, faster, more functional, reproducible, reliable and economical has given thin film processing a unique role in technology. Principles of Vapor Deposition of Thin Films brings in to one place a diverse amount of scientific background that is considered essential to become knowledgeable in thin film depostition techniques. Its ultimate goal as a reference is to provide the foundation upon which thin film science and technological innovation are possible. * Offers detailed derivation of important formulae. * Thoroughly covers the basic principles of materials science that are important to any thin film preparation. * Careful attention to terminologies, concepts and definitions, as well as abundance of illustrations offer clear support for the text.

Author : Riccardo d'Agostino
Publisher : Elsevier
Page : 544 pages
File Size : 18,54 MB
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 0323139086

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Plasma Deposition, Treatment, and Etching of Polymers takes a broad look at the basic principles, the chemical processes, and the diagnostic procedures in the interaction of plasmas with polymer surfaces. This recent technology has yielded a large class of new materials offering many applications, including their use as coatings for chemical fibers and films. Additional applications include uses for the passivation of metals, the surface hardening of tools, increased biocompatibility of biomedical materials, chemical and physical sensors, and a variety of micro- and optoelectronic devices. Appeals to a broad range of industries from microelectronics to space technology Discusses a wide array of new uses for plasma polymers Provides a tutorial introduction to the field Surveys various classes of plasma polymers, their chemical and morphological properties, effects of plasma process parameters on the growth and structure of these synthetic materials, and techniques for characterization Interests scientists, engineers, and students alike

Author : Zhuo (Carol). Chen
Publisher :
Page : pages
File Size : 37,46 MB
Release : 2012
Category : Chemical engineering
ISBN :

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Nano-crystalline Si (nc-Si) is a promising candidate for photovoltaic applications due to its better stability compared to amorphous Si, and relatively easy to manufacture at low cost, by plasma enhanced chemical vapor deposition (PECVD), compared to single crystal Si. The crystalline volume fraction of nc-Si films needs to be well controlled to prevent light-induced degradation of the otherwise amorphous hydrogenated Si (a-Si:H). A layer-by-layer technique using two separate plasma sources for a-Si:H deposition and nano-crystallization was developed. A capacitively-coupled plasma (CCP) with SiH4/He feed gas was used to deposit thin a-Si:H layers that were subsequently exposed to a H2 or D2 inductively-coupled plasma (ICP) to induce crystallization in the films. Deposition and nano-crystallization were performed sequentially and periodically to grow thin films. Raman spectroscopy was used to characterize the films and determine the fraction of crystalline. The crystalline volume fraction obtained in this work ranged from 0% to 72%. Many short exposures (20 s or 5 s) to the plasmas were more effective in producing nano-crystalline Si compared to one long exposure (40 min. or 4 min.). In addition, the fraction of nano-crystalline Si increased with increasing H2 ICP-to-SiH4/He CCP exposure time ratio (from 1/4 to 3/2). The crystallites had columnar structure along the film growth direction based on transmission electron microscopy (TEM). Etching of films by the D2 plasma was monitored by mass spectrometry. At 250 oC, the amorphous Si etching rate (0.25 nm/min) was much lower than the deposition rate (1.4 nm/min), and that etching did not occur exclusively on the surface or the near surface region. The blueshift (by about 1 eV) of the dielectric constants peak, found by spectroscopic ellipsometry (SE), suggested the formation of nano-crystallites in the bulk of the films. It is proposed that by tailoring the CCP deposition time as well as the H2 ICP exposure time per cycle, the crystalline fraction and crystallite size of the resulting films can be controlled for more stable solar cell materials. Further, by spatially separating film deposition and nano-crystallization, each of these processes can be individually optimized, providing flexibility in controlling film nanostructure and properties