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Photoelectronic Imaging Devices

Author : Lucien Biberman
Publisher : Springer Science & Business Media
Page : 595 pages
File Size : 44,74 MB
Release : 2013-11-11
Category : Science
ISBN : 1468429310

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The past decade has seen a major resurgence in optics research and the teaching of optics throughout the major universities both in this country and abroad. Electrooptical devices have become a challenging form of study that has penetrated both the electrical engineering and the physics departments of most major schools. There seems to be something challeng ing about a laser that appeals to both the practical electrical engineer with a hankering for fundamental research and to the fundamental physicist with a hankering to be practical. Somehow or other this same form of enthusiasm has not previously existed in the study of photoelectronic devices that form images. This field of, endeavor is becoming more and more so phisticated as newer forms of solid state devices enter the field not only in the data processing end but in the conversion of radiant energy into electrical charge patterns that are stored, manipulated, and read out in a way that a decade ago would have been considered beyond some fundamental limit or other. It is unfortunate, however, that this kind of material has heretofore been learned only by the process of becoming an apprentice in one or more of the major development laboratories concerned with the manufacture of image intensifiers or television tubes or the production of systems employing these devices.

Photoelectronic Imaging Devices

Author : Lucien Biberman
Publisher : Springer Science & Business Media
Page : 446 pages
File Size : 23,57 MB
Release : 2013-03-13
Category : Science
ISBN : 1468429280

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The past decade has seen a major resurgence in optical research and the teaching of optics in the major universities both in this country and abroad. Electrooptical devices have become achallenging subject of study that has penetrated both the electrical engineering and the physics departments of most major schools. There seems to be something about the laser that has appealed to both the practical electrical engineer with a hankering for fundamental research and to the fundamental physicist with a hankering to be practical. Somehow or other, this same form of enthusiasm has not previously existed in the study of photoelectronic devices that form images. This field of endeavor is becoming more and more sophisticated as newer forms of solid-state devices enter the field, not only in the data-processing end, but in the conversion of radiant energy into electrical charge patterns that are stored, manipulated, and read out in a way that a decade ago would have been considered beyond some fundamental limit or other.

Photoelectronic imaging devices

Author : Lucien M. Biberman (ed)
Publisher :
Page : pages
File Size : 18,60 MB
Release : 1971
Category : Electrooptical photography
ISBN :

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A Unified Approach for the Evaluation of Photosensor Imaging Devices

Author : Sol Nudelman
Publisher :
Page : 175 pages
File Size : 30,28 MB
Release : 1973
Category :
ISBN :

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Evaluation of photoelectronic imaging devices (particularly signal generating (pick-up) tubes) and TV displays, was pursued both theoretically and experimentally. A unified approach was evolved based on precise determination of input signal and noise, as well as output signal and noise. It applies to all devices (optical input-optical output, electrical input-optical output, optical input-electrical output), and provides from standard sources precise means for determining transfer characteristics, response versus spatial frequency, total noise (RMS) and noise spectrum (both temporal and spatial). (Modified author abstract).

Research on Photoelectronic Imaging Devices

Author : G. Sadasiv
Publisher :
Page : 222 pages
File Size : 30,20 MB
Release : 1973
Category :
ISBN :

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The study of the activation processes for achieving negative electron affinity (NEA) in Ge-doped GaAs layers grown by liquid phase epitaxy is described. Apart from the III-V compounds, NEA has been reported in silicon. The literature suggests that the details of the adsorption of oxygen and Cs on the surface are of crucial importance in achieving NEA surfaces on silicon. A study is reported of the role of dislocations in the adsoprtion of oxygen on the Si (100) surface. Studies on silver sulfide targets for vidicons, and of the heterojunction structure Metal-Silicon Monoxide-Gallium Arsenide are also described. In the educational area a wide ranging set of courses was established to guide the student from the senior level to the advanced graduate stage in solid state physics, optics, electronics, information theory and signal processing.