[PDF] Nonequilibrium Phase Transitions In Semiconductors eBook
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Semiconductors can exhibit electrical instabilities like current runaway, threshold switching, current filamentation, or oscillations, when they are driven far from thermodynamic equilibrium. This book presents a coherent theoretical des- cription of such cooperative phenomena induced by generation and recombination processes of charge carriers in semicon- ductors.
This book describes two main classes of non-equilibrium phase-transitions: static and dynamics of transitions into an absorbing state, and dynamical scaling in far-from-equilibrium relaxation behavior and ageing.
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.