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A novel parameter extraction technique is applied to the modeling of rectangular spiral inductors and validated with measurements and simulations. To enhance the inductor quality ('Q') factor, a differentially excited symmetric inductor is used. Compared with a single-ended configuration, the differential structure offers a higher 'Q'-factor over a wider range of frequencies. Application of the symmetric inductor model is demonstrated using two oscillator designs in which a differentially excited symmetric inductor is compared with conventional spiral inductors. The symmetric inductor improves the overall circuit performance and saves chip area.
Spiral inductors are a key component of mixed-signal and analog integrated circuits (IC's). Such circuits are often fabricated using silicon-based technology, owing to the inherent low-cost and high volume production aspects. However, semiconducting substrate materials such as silicon can have adverse effects on spiral inductor performance due to the lossy nature of the material. Since the operating requirements of many high performance IC's demand reactive components that have high Quality Factor's (Q's), and are thus low loss devices, the need for accurate modeling of such structures over lossy substrate media is key to successful circuit design. The Q's of commonly available off-chip inductors are in the range of 50- 100 for frequencies ranging up to a few gigahertz. Since off-chip inductors must be connected through package pins, solder bumps, etc., which all contribute additional loss and thus lower the apparent Q of an external device, the typical on-chip Q requirement for a given RFIC design is generally lower than that for an off-chip spiral solution. However, a spiral inductor that was designed and fabricated originally in a low loss technology such as thin-film alumina may have substantially worse performance in regard to Q if it is used in a silicon-based technology, owing to the conductive substrate. For this reason, it is imperative that semiconducting substrate effects be accurately accounted for by any modeling effort for monolithic spirals in RFICs. This thesis presents a complete modeling solution for both single and multi-level spiral inductors over lossy silicon substrates, along with design considerations and methods for mitigation of the undesirable performance effects of semiconducting substrates. The modeling solution is based on Spectral Domain Approach (SDA) solutions for frequency dependent complex capacitive (i.e. both capacitance and conductance) parasitic elements combined with a quasi-magnetostatic field solution for calculation of the frequency dependent complex inductive (i.e. both inductance and resistance) terms. The effects of geometry and process variations are considered as well as the incorporation of Patterned Ground Shields (PGS) for the purpose of Q enhancement. Proposals for future extensions of this work are discussed in the concluding chapter.
The modern wireless communication industry has put great demands on circuit designers for smaller, cheaper transceivers in the gigahertz frequency range. One tool which has assisted designers in satisfying these requirements is the use of on-chip inductiveelements (inductors and transformers) in silicon (Si) radio-frequency (RF) integrated circuits (ICs). These elements allow greatly improved levels of performance in Si monolithic low-noise amplifiers, power amplifiers, up-conversion and down-conversion mixers and local oscillators. Inductors can be used to improve the intermodulation distortion performance and noise figure of small-signal amplifiers and mixers. In addition, the gain of amplifier stages can be enhanced and the realization of low-cost on-chip local oscillators with good phase noise characteristics is made feasible. In order to reap these benefits, it is essential that the IC designer be able to predict and optimize the characteristics of on-chip inductiveelements. Accurate knowledge of inductance values, quality factor (Q) and the influence of ad- cent elements (on-chip proximity effects) and substrate losses is essential. In this book the analysis, modeling and application of on-chip inductive elements is considered. Using analyses based on Maxwells equations, an accurate and efficient technique is developed to model these elements over a wide frequency range. Energy loss to the conductive substrate is modeled through several mechanisms, including electrically induced displacement and conductive c- rents and by magnetically induced eddy currents. These techniques have been compiled in a user-friendly software tool ASITIC (Analysis and Simulation of Inductors and Transformers for Integrated Circuits).
This newly revised and expanded edition of the 2003 Artech House classic, Radio Frequency Integrated Circuit Design, serves as an up-to-date, practical reference for complete RFIC know-how. The second edition includes numerous updates, including greater coverage of CMOS PA design, RFIC design with on-chip components, and more worked examples with simulation results. By emphasizing working designs, this book practically transports you into the authors' own RFIC lab so you can fully understand the function of each design detailed in this book. Among the RFIC designs examined are RF integrated LC-based filters, VCO automatic amplitude control loops, and fully integrated transformer-based circuits, as well as image reject mixers and power amplifiers. If you are new to RFIC design, you can benefit from the introduction to basic theory so you can quickly come up to speed on how RFICs perform and work together in a communications device. A thorough examination of RFIC technology guides you in knowing when RFICs are the right choice for designing a communication device. This leading-edge resource is packed with over 1,000 equations and more than 435 illustrations that support key topics.
With the ability to improve performance, reduce fabrication costs, and increase integration levels of both RX and TX sections of the RF/mm-wave front-end, passive inductive components have experienced extraordinary growth in ICs. Therefore, a fundamental understanding of monolithic inductors and transformers has become essential for all process eng
Intended for engineers who are starting out in the design of integrated inductors, this book describes the whole design flow, basic selection of the geometry and optimisation of the quality by redesigning the geometry, measurement and de-embedding and characterisation.
This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.
If you are looking for a complete study of the fundamental concepts in magnetic theory, read this book. No other textbook covers magnetic components of inductors and transformers for high-frequency applications in detail. This unique text examines design techniques of the major types of inductors and transformers used for a wide variety of high-frequency applications including switching-mode power supplies (SMPS) and resonant circuits. It describes skin effect and proximity effect in detail to provide you with a sound understanding of high-frequency phenomena. As well as this, you will discover thorough coverage on: integrated inductors and the self-capacitance of inductors and transformers, with expressions for self-capacitances in magnetic components; criteria for selecting the core material, as well as core shape and size, and an evaluation of soft ferromagnetic materials used for magnetic cores; winding resistance at high frequencies; expressions for winding and core power losses when non-sinusoidal inductor or transformer current waveforms contain harmonics. Case studies, practical design examples and procedures (using the area product method and the geometry coefficient method) are expertly combined with concept-orientated explanations and student-friendly analysis. Supplied at the end of each chapter are summaries of the key concepts, review questions, and problems, the answers to which are available in a separate solutions manual. Such features make this a fantastic textbook for graduates, senior level undergraduates and professors in the area of power electronics in addition to electrical and computer engineering. This is also an inimitable reference guide for design engineers of power electronics circuits, high-frequency transformers and inductors in areas such as (SMPS) and RF power amplifiers and circuits.