[PDF] Modeling And Optimization For Epitaxial Growth Transport And Growth Studies eBook

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Publisher :
Page : 41 pages
File Size : 34,66 MB
Release : 1999
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ISBN :

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This report details the objectives, methodologies, and results for Phase II of the project, "Modeling and Optimization for Epitaxial Growth". This project is a joint effort between the Institute for Systems Research (ISR) and Northrop Grumman Corporation's Electronic Sensors and Systems Sector (ESSS), Baltimore, MD. The overall objective is to improve manufacturing effectiveness for epitaxial growth of silicon and silicon-germanium (Si-Ge) thin films on a silicon wafer. Growth takes place in the ASM Epsilon-1 chemical vapor deposition (CVD) reactor, a production tool currently in use at ESSS. Phase II project results include development of a new comprehensive process-equipment model capable of predicting gas flow, heat transfer, species transport, and chemical mechanisms in the reactor under a variety of process conditions and equipment settings. Applications of the model include prediction and control of deposition rate and thickness uniformity; studying sensitivity of deposition rate to process settings such as temperature, pressure, and flow rates; and reducing the use of consumables via purge flow optimization. The implications of various simulation results are discussed in terms of how they can be used to reduce costs and improve product quality, e.g., thickness uniformity of thin films. We demonstrate that achieving deposition uniformity requires some degree of temperature non-uniformity to compensate for the effects of other phenomena such as reactant depletion, gas heating and gas phase reactions, thermal diffusion of species, and flow patterns.

Author : Ernst Heinrich Hirschel
Publisher : Springer Science & Business Media
Page : 293 pages
File Size : 20,44 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 3540456937

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This volume contains eighteen reports on work, which is conducted since 2000 in the Collaborative Research Programme 'Numerical Flow Simulation' of the Centre National de la Recherche Scientifique (CNRS) and the Deutsche Forschungsgemeinschaft (DFG). French and German engineers and mathematicians present their joint research on the topics 'Development of Solution Techniques', 'Crystal Growth and Melts', 'Flows of Reacting Gases, Sound Generation' and 'Turbulent Flows'. In the background of their work is the still strong growth of the performance of super-computer architectures, which, together with large advances in algorithms, is opening vast new application areas of numerical flow simulation in research and industrial work. Results of this programme from the period 1996 to 1998 have been presented in NNFM 66 (1998), and NNFM75 (2001).

Author : J. W. Matthews
Publisher : Elsevier
Page : 315 pages
File Size : 42,63 MB
Release : 2013-10-22
Category : Science
ISBN : 1483271811

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Epitaxial Growth Part B is the second part of a collection of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The topics discussed are the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The methods used to prepare and examine thin films are described and a list of the overgrowth-substrate combinations studied so far is given.

Author : Marian A. Herman
Publisher : Springer Science & Business Media
Page : 546 pages
File Size : 46,85 MB
Release : 2004-01-22
Category : Science
ISBN : 9783540678212

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In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.

Author : J Matthews
Publisher : Elsevier
Page : 401 pages
File Size : 20,21 MB
Release : 2012-12-02
Category : Science
ISBN : 0323152120

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Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.

Author : B Baliga
Publisher : Elsevier
Page : 337 pages
File Size : 24,42 MB
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 0323155456

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Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.