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Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the [roperties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.
The last decade has seen radical changes in our understand ing of the physical properties of semiconductors. It has been es tablished that the energy spectrum of electrons is much more complex than had originally been predicted: in many cases, there are several energy bands with different parameters. It has been found that the effective carrier mass, which had been assumed to be constant for a given material, depends on the carrier energy, temperature, pressure, and even the nature and number of de fects. Our understanding of the mechanism of the motion and scat tering of carriers, recombination mechanisms, and interaction with electromagnetic radiation has also changed. New applications of semiconducting materials have been discovered and old ones have been extended; these include high-power devices, devices sensitive to infrared radiation, and lasers. The visible evidence of the pro gress is in the form of hundreds of publications, some of which re port extremely refined and comprehensive investigations of semi conducting materials. A scientist concerned with investigations or applications of semiconducting materials or devices cannot ignore these publica tions because of the possibility of repeating work already done or of committing serious error. s. On the other hand, a beginner would require years to obtain a thorough understanding of the literature in his own narrow subject, and in many cases this process would be like the chase of a tortoise by Achilles in the paradox of Zeno of Elea (495-435 B. C'>.
Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the properties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.
Technical plasmas have a wide range of industrial applications. The Encyclopedia of Plasma Technology covers all aspects of plasma technology from the fundamentals to a range of applications across a large number of industries and disciplines. Topics covered include nanotechnology, solar cell technology, biomedical and clinical applications, electronic materials, sustainability, and clean technologies. The book bridges materials science, industrial chemistry, physics, and engineering, making it a must have for researchers in industry and academia, as well as those working on application-oriented plasma technologies. Also Available Online This Taylor & Francis encyclopedia is also available through online subscription, offering a variety of extra benefits for researchers, students, and librarians, including: Citation tracking and alerts Active reference linking Saved searches and marked lists HTML and PDF format options Contact Taylor and Francis for more information or to inquire about subscription options and print/online combination packages. US: (Tel) 1.888.318.2367; (E-mail) [email protected] International: (Tel) +44 (0) 20 7017 6062; (E-mail) [email protected]
Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillations, magnetophonon resonance, and magneto-optical phenomena are discussed. Experimental physicists, theoretical physicists, students and research workers, and engineers working in the field of semiconductor electronics will find this book a great source of vital information.
This book presents and facilitates the interchange of new research and development results concerned with hot topics in thermoelectric generators (TEGs) research, development and production. Topics include prospective thermoelectric materials for manufacturing TEGs operating in low-, mid-, and high temperature ranges, thermal and mechanical degradation issues in prospective thermoelectric materials and TEG modules, theoretical study of novel inorganic and organic thermoelectric materials, novel methods and apparatus for measuring performance of thermoelectric materials and TEGs, and thermoelectric power generators simulation, modeling, design and practice.This book helps researchers tackle the challenges that still remain in creating cheap and effective TEGs and presents the latest trends and technologies in development and production of advanced thermoelectric generation devices. Provides a concentration of new research and development in the field of Thermoelectric energy generation; Facilitates the interchange of new ideas and results to react effectively to the challenges of Thermoelectric generators; Explains both the advancements and challenges in TEGs.
This thesis describes a series of experimental studies of lead chalcogenide thermoelectric semiconductors, mainly PbSe. Focusing on a well-studied semiconductor and reporting good but not extraordinary zT, this thesis distinguishes itself by answering the following questions that haven't been answered: What represents the thermoelectric performance of PbSe? Where does the high zT come from? How (and how much) can we make it better? For the first question, samples were made with highest quality. Each transport property was carefully measured, cross-verified and compared with both historical and contemporary report to overturn commonly believed underestimation of zT. For n- and p-type PbSe zT at 850 K can be 1.1 and 1.0, respectively. For the second question, a systematic approach of quality factor B was used. In n-type PbSe zT is benefited from its high-quality conduction band that combines good degeneracy, low band mass and low deformation potential, whereas zT of p-type is boosted when two mediocre valence bands converge (in band edge energy). In both cases the thermal conductivity from PbSe lattice is inherently low. For the third question, the use of solid solution lead chalcogenide alloys was first evaluated. Simple criteria were proposed to help quickly evaluate the potential of improving zT by introducing atomic disorder. For both PbTe1-xSex and PbSe1-xSx, the impacts in electron and phonon transport compensate each other. Thus, zT in each case was roughly the average of two binary compounds. In p-type Pb1-xSrxSe alloys an improvement of zT from 1.1 to 1.5 at 900 K was achieved, due to the band engineering effect that moves the two valence bands closer in energy. To date, making n-type PbSe better hasn't been accomplished, but possible strategy is discussed.