[PDF] Internal Photoemission Spectroscopy eBook

Author : Valeri V. Afanas'ev
Publisher : Elsevier
Page : 404 pages
File Size : 35,25 MB
Release : 2014-02-22
Category : Science
ISBN : 0080999301

GET BOOK

The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. First complete model description of the internal photoemission phenomena Overview of the most reliable energy barrier determination procedures and trap characterization methods Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals

Author : Valeri V. Afanas'ev
Publisher : Elsevier
Page : 312 pages
File Size : 41,29 MB
Release : 2010-07-07
Category : Technology & Engineering
ISBN : 0080555896

GET BOOK

The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several “hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors

Author : Joseph Woicik
Publisher : Springer
Page : 576 pages
File Size : 46,77 MB
Release : 2015-12-26
Category : Science
ISBN : 3319240439

GET BOOK

This book provides the first complete and up-to-date summary of the state of the art in HAXPES and motivates readers to harness its powerful capabilities in their own research. The chapters are written by experts. They include historical work, modern instrumentation, theory and applications. This book spans from physics to chemistry and materials science and engineering. In consideration of the rapid development of the technique, several chapters include highlights illustrating future opportunities as well.

Author : Vitalyi Igorevich Talanin
Publisher : BoD – Books on Demand
Page : 306 pages
File Size : 48,86 MB
Release : 2017-05-31
Category : Science
ISBN : 9535131591

GET BOOK

The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the much respected researchers in this area and cover the most recent developments and applications of silicon technology and some fundamental questions. This book provides the latest research developments in important aspects of silicon including nanoclusters, solar silicon, porous silicon, some technological processes, and silicon devices and also fundamental question about silicon structural perfection. This book is of interest both to fundamental research and to practicing scientists and also will be useful to all engineers and students in industry and academia.

Author : Giovanni Agostini
Publisher : Elsevier
Page : 501 pages
File Size : 17,69 MB
Release : 2011-08-11
Category : Science
ISBN : 0080558151

GET BOOK

In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Author : Claudia Cancellieri
Publisher : Springer
Page : 326 pages
File Size : 13,23 MB
Release : 2018-04-09
Category : Technology & Engineering
ISBN : 3319749897

GET BOOK

This book summarizes the most recent and compelling experimental results for complex oxide interfaces. The results of this book were obtained with the cutting-edge photoemission technique at highest energy resolution. Due to their fascinating properties for new-generation electronic devices and the challenge of investigating buried regions, the book chiefly focuses on complex oxide interfaces. The crucial feature of exploring buried interfaces is the use of soft X-ray angle-resolved photoemission spectroscopy (ARPES) operating on the energy range of a few hundred eV to increase the photoelectron mean free path, enabling the photons to penetrate through the top layers – in contrast to conventional ultraviolet (UV)-ARPES techniques. The results presented here, achieved by different research groups around the world, are summarized in a clearly structured way and discussed in comparison with other photoemission spectroscopy techniques and other oxide materials. They are complemented and supported by the most recent theoretical calculations as well as results of complementary experimental techniques including electron transport and inelastic resonant X-ray scattering.

Author : Zhiyong Ma
Publisher : CRC Press
Page : 843 pages
File Size : 15,12 MB
Release : 2017-03-27
Category : Science
ISBN : 135173394X

GET BOOK

Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.

Author : Juan A Colón Santana
Publisher : Morgan & Claypool Publishers
Page : 151 pages
File Size : 31,1 MB
Release : 2016-01-01
Category : Technology & Engineering
ISBN : 1627053077

GET BOOK

Photoemission (also known as photoelectron) spectroscopy refers to the process in which an electron is removed from a specimen after the atomic absorption of a photon. The first evidence of this phenomenon dates back to 1887 but it was not until 1905 that Einstein offered an explanation of this effect, which is now referred to as ""the photoelectric effect"". Quantitative Core Level Photoelectron Spectroscopy: A Primer tackles the pragmatic aspects of the photoemission process with the aim of introducing the reader to the concepts and instrumentation that emerge from an experimental approach. The basic elements implemented for the technique are discussed and the geometry of the instrumentation is explained. The book covers each of the features that have been observed in the X-ray photoemission spectra and provides the tools necessary for their understanding and correct identification. Charging effects are covered in the penultimate chapter with the final chapter bringing closure to the basic uses of the X-ray photoemission process, as well as guiding the reader through some of the most popular applications used in current research.

Author : Stephan Hüfner
Publisher : Springer Science & Business Media
Page : 671 pages
File Size : 47,67 MB
Release : 2013-03-09
Category : Science
ISBN : 3662092808

GET BOOK

The author, S. Hüfner, presents an authoritative and up-to-date introduction to the field by comprehensively treating the electronic structures of atoms, molecules, solids, and surfaces. Brief descriptions are given of inverse photoemission, spin-polarized photoemission and photoelectron diffraction. Experimental aspects are considered throughout the third edition book and the results are carefully interpreted in terms of the theory. A wealth of measured data is presented in tabulator form for easy use by experimentalists. The reader will learn about the basic technique of photoemission spectroscopy and obtain the necessary background for work based on this book.