[PDF] High Permittivity Gate Dielectric Materials eBook

Author : Samares Kar
Publisher : Springer Science & Business Media
Page : 515 pages
File Size : 22,74 MB
Release : 2013-06-25
Category : Technology & Engineering
ISBN : 3642365353

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"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Author : S. Kar
Publisher : The Electrochemical Society
Page : 550 pages
File Size : 30,16 MB
Release : 2008-10
Category : Dielectrics
ISBN : 1566776511

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The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Author : Michel Houssa
Publisher : CRC Press
Page : 614 pages
File Size : 11,34 MB
Release : 2003-12-01
Category : Science
ISBN : 1420034146

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The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ

Author : Samares Kar
Publisher : The Electrochemical Society
Page : 676 pages
File Size : 30,97 MB
Release : 2007
Category : Dielectrics
ISBN : 1566775701

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This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Author : Howard Huff
Publisher : Springer Science & Business Media
Page : 723 pages
File Size : 11,35 MB
Release : 2005-11-02
Category : Technology & Engineering
ISBN : 3540264620

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Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.

Author : Gang He
Publisher : John Wiley & Sons
Page : 560 pages
File Size : 50,76 MB
Release : 2012-08-10
Category : Technology & Engineering
ISBN : 3527646361

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A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Author : Mikhail Baklanov
Publisher : John Wiley & Sons
Page : 508 pages
File Size : 26,88 MB
Release : 2007-04-04
Category : Technology & Engineering
ISBN : 0470065419

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The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.

Author : Mark J. Lododa
Publisher : The Electrochemical Society
Page : 262 pages
File Size : 18,41 MB
Release : 2000
Category : Technology & Engineering
ISBN : 9781566772709

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Contains papers from a May 2000 symposium, representing the state of the art in areas of dielectric materials science and process integration. Papers are arranged in sections on low and high dielectric constant materials, covering topics such as ammonia plasma passivation effects on properties of post-CMP low-k HSQ, characterization of ashing effects on low-k dielectric films, and electron beam curing of thin film polymer dielectrics. Other subjects include characterization of high-k dielectrics using the non-contact surface charge profiler method, and processing effects and electrical evaluation of ZrO2 formed by RTP oxidation of Zr. Loboda is affiliated with Dow Corning Corporation. c. Book News Inc.

Author : Evgeni Gusev
Publisher : Springer Science & Business Media
Page : 508 pages
File Size : 34,25 MB
Release : 2006-01-27
Category : Computers
ISBN : 9781402043666

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The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.