[PDF] High Performance Rf Coil Inductors On Silicon eBook

Author :
Publisher :
Page : 8 pages
File Size : 36,38 MB
Release : 1998
Category :
ISBN :

GET BOOK

Strong demand for wireless communication devices has motivated research directed toward monolithic integration of transceivers. The fundamental electronic component least compatible with silicon integrated circuits is the inductor, although a number of inductors are required to implement oscillators, filters and matching networks in cellular devices. Spiral inductors have been integrated into the silicon IC metallization sequence but have not performed adequately due to coupling to the silicon which results in parasitic capacitance and loss. We have, for the first time, fabricated three dimensional coil inductors on silicon which have significantly lower capacitive coupling and loss and which now exceed the requirements of potential applications. Quality factors of 30 at 1 GHz have been measured in single turn devices and Q> 16 in 2 and 4 turn devices. The reduced Q for multiturn devices appears to be related to eddy currents in outer turns generated by magnetic fields from current in neighboring turns. Higher Q values significantly in excess of 30 are anticipated using modified coil designs.

Author : Richard D. Lutz
Publisher :
Page : 310 pages
File Size : 30,71 MB
Release : 2005
Category : Electric inductors
ISBN :

GET BOOK

Spiral inductors are a key component of mixed-signal and analog integrated circuits (IC's). Such circuits are often fabricated using silicon-based technology, owing to the inherent low-cost and high volume production aspects. However, semiconducting substrate materials such as silicon can have adverse effects on spiral inductor performance due to the lossy nature of the material. Since the operating requirements of many high performance IC's demand reactive components that have high Quality Factor's (Q's), and are thus low loss devices, the need for accurate modeling of such structures over lossy substrate media is key to successful circuit design. The Q's of commonly available off-chip inductors are in the range of 50- 100 for frequencies ranging up to a few gigahertz. Since off-chip inductors must be connected through package pins, solder bumps, etc., which all contribute additional loss and thus lower the apparent Q of an external device, the typical on-chip Q requirement for a given RFIC design is generally lower than that for an off-chip spiral solution. However, a spiral inductor that was designed and fabricated originally in a low loss technology such as thin-film alumina may have substantially worse performance in regard to Q if it is used in a silicon-based technology, owing to the conductive substrate. For this reason, it is imperative that semiconducting substrate effects be accurately accounted for by any modeling effort for monolithic spirals in RFICs. This thesis presents a complete modeling solution for both single and multi-level spiral inductors over lossy silicon substrates, along with design considerations and methods for mitigation of the undesirable performance effects of semiconducting substrates. The modeling solution is based on Spectral Domain Approach (SDA) solutions for frequency dependent complex capacitive (i.e. both capacitance and conductance) parasitic elements combined with a quasi-magnetostatic field solution for calculation of the frequency dependent complex inductive (i.e. both inductance and resistance) terms. The effects of geometry and process variations are considered as well as the incorporation of Patterned Ground Shields (PGS) for the purpose of Q enhancement. Proposals for future extensions of this work are discussed in the concluding chapter.

Author : Kiat Seng Yeo
Publisher : World Scientific
Page : 358 pages
File Size : 24,47 MB
Release : 2010
Category : Technology & Engineering
ISBN : 981427156X

GET BOOK

This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future.

Author : I.D. Robertson
Publisher : IET
Page : 583 pages
File Size : 19,78 MB
Release : 2001-11-30
Category : Technology & Engineering
ISBN : 0852967861

GET BOOK

This book gives an in-depth account of GaAs, InP and SiGe, technologies and describes all the key techniques for the design of amplifiers, ranging from filters and data converters to image oscillators, mixers, switches, variable attenuators, phase shifters, integrated antennas and complete monolithic transceivers.

Author : Shengyu Jin
Publisher :
Page : 70 pages
File Size : 26,6 MB
Release : 2013
Category :
ISBN : 9781303015014

GET BOOK

This research focuses on the study to explore silicon CMOS on-chip inductors which are suitable for high radio frequency (RF) power applications. Silicon on-chip inductors are typically used in RF circuit building blocks operating with a small signal (RF power much less than 10 dBm) such as LNAs, mixers, input matching circuits for PA. And its equivalent circuit model is developed with linear circuit elements only valid in small signal conditions. However, not much work has been done to investigate nonlinear circuit model of on-chip inductors and to explore its use in RF circuits operating at high RF power conditions (up to 35dBm or more). This work is trying to fill this blank. After extensive analysis of loss mechanism for such silicon on-chip inductor especially spiral inductors, a large signal model for on-chip inductor is presented and performance is predicted under high RF power: self-heating due to high RF power causes quality factor Q degrading noticeably. Then a couple experiments are carried out to verify such self-heating effect due to high RF power. To get more insights in this problem, a simulation approach is developed with help of multi-physics software which can couple such electromagnetic and thermal processes. This simulation approach is verified and calibrated by liquid crystal thermography. Such simulation approach can detect the weakest point of inductor design and evaluate different designs as well. With modern packaging technology, 3-D high Q solenoid on-chip inductors are possible. A careful designed 3-D high Q solenoid on-chip inductor is proposed and is proved its suitability for high power RF applications by simulations.

Author : Ali M. Niknejad
Publisher : Springer Science & Business Media
Page : 193 pages
File Size : 48,90 MB
Release : 2005-12-15
Category : Technology & Engineering
ISBN : 0306470381

GET BOOK

The modern wireless communication industry has put great demands on circuit designers for smaller, cheaper transceivers in the gigahertz frequency range. One tool which has assisted designers in satisfying these requirements is the use of on-chip inductiveelements (inductors and transformers) in silicon (Si) radio-frequency (RF) integrated circuits (ICs). These elements allow greatly improved levels of performance in Si monolithic low-noise amplifiers, power amplifiers, up-conversion and down-conversion mixers and local oscillators. Inductors can be used to improve the intermodulation distortion performance and noise figure of small-signal amplifiers and mixers. In addition, the gain of amplifier stages can be enhanced and the realization of low-cost on-chip local oscillators with good phase noise characteristics is made feasible. In order to reap these benefits, it is essential that the IC designer be able to predict and optimize the characteristics of on-chip inductiveelements. Accurate knowledge of inductance values, quality factor (Q) and the influence of ad- cent elements (on-chip proximity effects) and substrate losses is essential. In this book the analysis, modeling and application of on-chip inductive elements is considered. Using analyses based on Maxwells equations, an accurate and efficient technique is developed to model these elements over a wide frequency range. Energy loss to the conductive substrate is modeled through several mechanisms, including electrically induced displacement and conductive c- rents and by magnetically induced eddy currents. These techniques have been compiled in a user-friendly software tool ASITIC (Analysis and Simulation of Inductors and Transformers for Integrated Circuits).

Author : Genemala Haobijam
Publisher : Springer Science & Business Media
Page : 116 pages
File Size : 15,96 MB
Release : 2013-09-07
Category : Technology & Engineering
ISBN : 813221515X

GET BOOK

The book addresses the critical challenges faced by the ever-expanding wireless communication market and the increasing frequency of operation due to continuous innovation of high performance integrated passive devices. The challenges like low quality factor, design complexity, manufacturability, processing cost, etc., are studied with examples and specifics. Silicon on-chip inductor was first reported in 1990 by Nguyen and Meyer in a 0.8 μm silicon bipolar complementary metal oxide semiconductor technology (BiCMOS). Since then, there has been an enormous progress in the research on the performance trends, design and optimization, modeling, quality factor enhancement techniques, etc., of spiral inductors and significant results are reported in literature for various applications. This book introduces an efficient method of determining the optimized layout of on chip spiral inductor. The important fundamental tradeoffs of the design like quality factor and area, quality factor and inductance, quality factor and operating frequency, maximum quality factor and the peak frequency is also explored. The authors proposed an algorithm for accurate design and optimization of spiral inductors using a 3D electromagnetic simulator with minimum number of inductor structure simulations and thereby reducing its long computation time. A new multilayer pyramidal symmetric inductor structure is also proposed in this book. Being multilevel, the proposed inductor achieves high inductance to area ratio and hence occupies smaller silicon area.

Author : Jaime Aguilera
Publisher : Springer Science & Business Media
Page : 203 pages
File Size : 44,82 MB
Release : 2003-11-30
Category : Technology & Engineering
ISBN : 1402076762

GET BOOK

Intended for engineers who are starting out in the design of integrated inductors, this book describes the whole design flow, basic selection of the geometry and optimisation of the quality by redesigning the geometry, measurement and de-embedding and characterisation.

Author : Ao Zhang
Publisher : World Scientific
Page : 322 pages
File Size : 13,37 MB
Release : 2023-03-21
Category : Technology & Engineering
ISBN : 9811255377

GET BOOK

This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

Author : Inder J. Bahl
Publisher : Artech House
Page : 593 pages
File Size : 40,2 MB
Release : 2022-12-31
Category : Technology & Engineering
ISBN : 1630819336

GET BOOK

Fully updated and including entirely new chapters, this Second Edition provides in-depth coverage of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers. Featuring extensive formulas for lumped elements, design trade-offs, and an updated and current list of references, the book helps you understand the value and usefulness of lumped elements in the design of RF, microwave and millimeter wave components and circuits. You’ll find a balanced treatment between standalone lumped elements and their circuits using MICs, MMICs and RFICs technologies. You’ll also find detailed information on a broader range RFICs that was not available when the popular first edition was published. The book captures – in one consolidated volume -- the fundamentals, equations, modeling, examples, references and overall procedures to design, test and produce microwave components that are indispensable in industry and academia today. With its superb organization and expanded coverage of the subject, this is a must-have, go-to resource for practicing engineers and researchers in industry, government and university and microwave engineers working in the antenna area. Students will also find it a useful reference with its clear explanations, many examples and practical modeling guidelines.