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Electronic Devices Architectures for the NANO-CMOS Era

Author : Simon Deleonibus
Publisher : CRC Press
Page : 332 pages
File Size : 47,11 MB
Release : 2019-05-08
Category : Technology & Engineering
ISBN : 0429533624

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In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.

Advanced Gate Stacks for High-Mobility Semiconductors

Author : Athanasios Dimoulas
Publisher : Springer Science & Business Media
Page : 397 pages
File Size : 19,89 MB
Release : 2008-01-01
Category : Technology & Engineering
ISBN : 354071491X

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This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Silicon Based Unified Memory Devices and Technology

Author : Arup Bhattacharyya
Publisher : CRC Press
Page : 566 pages
File Size : 19,17 MB
Release : 2017-07-06
Category : Technology & Engineering
ISBN : 1351798316

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The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.

High-k Gate Dielectrics for CMOS Technology

Author : Gang He
Publisher : John Wiley & Sons
Page : 560 pages
File Size : 49,39 MB
Release : 2012-08-10
Category : Technology & Engineering
ISBN : 3527646361

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A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2

Author : Fred Roozeboom
Publisher : The Electrochemical Society
Page : 472 pages
File Size : 11,68 MB
Release : 2006
Category : Gate array circuits
ISBN : 1566775027

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These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Physics and Technology of High-k Gate Dielectrics 4

Author : Samares Kar
Publisher : The Electrochemical Society
Page : 565 pages
File Size : 41,36 MB
Release : 2006
Category : Dielectrics
ISBN : 1566775035

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This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.