[PDF] Gate Dielectric Integrity eBook

Author : Dinesh C. Gupta
Publisher : ASTM International
Page : 172 pages
File Size : 50,49 MB
Release : 2000
Category : Dielectrics
ISBN : 0803126158

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Annotation Contains papers from a January 1999 conference held in San Jose, California, describing concepts and metrology of Gate Dielectric Integrity (GDI) and discussing its applications for material and device processes and tool qualification. Topics include methods, protocols, and reliability assessment as related to dielectric integrity. Papers are organized in sections on concepts, thin gate dielectrics, characterization and applications, and standardization. There is also a section summarizing panel discussions. Gupta is affiliated with Mitsubishi Silicon America. Brown is affiliated with Texas Instruments Inc. Annotation copyrighted by Book News, Inc., Portland, OR.

Author : Michel Houssa
Publisher : CRC Press
Page : 614 pages
File Size : 36,73 MB
Release : 2003-12-01
Category : Science
ISBN : 1420034146

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The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ

Author : Takashi Hori
Publisher : Springer Science & Business Media
Page : 362 pages
File Size : 14,2 MB
Release : 2012-12-06
Category : Science
ISBN : 3642608566

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Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.

Author : Samares Kar
Publisher : The Electrochemical Society
Page : 565 pages
File Size : 34,30 MB
Release : 2006
Category : Dielectrics
ISBN : 1566775035

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This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Author : Samares Kar
Publisher : The Electrochemical Society
Page : 512 pages
File Size : 28,76 MB
Release : 2004
Category : Science
ISBN : 9781566774055

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"This volume is the proceedings of The Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ... and was held during [the] 204th Meeting [of the Electrochemical Society] ..."--P. v.

Author : Samares Kar
Publisher : The Electrochemical Society
Page : 676 pages
File Size : 34,31 MB
Release : 2007
Category : Dielectrics
ISBN : 1566775701

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This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Author : RJ. Hillard
Publisher :
Page : 9 pages
File Size : 42,93 MB
Release : 2000
Category : Gate array circuits
ISBN :

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MOS device performance and reliability depend strongly on the quality of the gate dielectric. Metallic contamination, stoichiometry, interface properties, and substrate quality all have an influence. Gate Oxide Integrity (GOI) measurements are frequently used for monitoring oxide quality and reliability. Conventionally, testing the integrity of these gate dielectrics requires the use of prefabricated polysilicon or metal gate MOS capacitors (MOSCAPs). However, this involves short loop processing that is time-consuming and can itself affect the gate oxide quality. Therefore, a method that can monitor these factors rapidly and accurately for both production and process development is highly desirable. In this paper, a mercury gate is presented for Gate Oxide Integrity (GOI) measurements. This mercury gate is formed using a highly repeatable mercury probe Capacitance-Voltage/Charge-Voltage/Current-Voltage (CV/QV/IV) system. Several applications are discussed that show how these measurements may be used in monitoring a variety of process-induced defects. An example of the application of mercury gate Metal-Oxide-Semiconductor Current-Voltage (MOS IV) measurements for ultra-thin (less than 10 nm) oxide development is also presented.

Author : Y. Yokota
Publisher :
Page : 10 pages
File Size : 30,25 MB
Release : 2000
Category : Gate array circuits
ISBN :

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The continued aggressive scaling of device dimensions presents serious challenges in transistor design and process integration. In particular for the gate dielectric, the reduction in equivalent oxide thickness challenges the limits of current process and equipment technologies. Single-wafer oxidation technologies are fundamentally different from their batch furnace counterparts and can address these challenges. The differences in single-wafer reaction chemistry are responsible for significant improvements in gate dielectric integrity. Rapid thermal processing also makes possible high levels of nitrogen incorporation, while maintaining this reliability improvement. These improvements will be increasingly important for the next several device generations.