[PDF] Ferroelectric Thin Films X Volume 688 eBook

Author : Stephen R. Gilbert
Publisher : Cambridge University Press
Page : 444 pages
File Size : 34,79 MB
Release : 2014-06-05
Category : Technology & Engineering
ISBN : 9781107412118

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This book, the tenth in a highly successful series from the Materials Research Society, presents technical information on ferroelectric thin films from academia, government laboratories, and industry. Substantial progress in several areas of integrated ferroelectric and high-permittivity device technology are demonstrated. In particular, the latest developments in high-density FeRAM devices are reviewed, as are developments in the use of these films in piezoelectric, pyroelectric, tunable RF, integrated capacitor, and optical waveguide applications. Thin-film processing techniques used to deposit a variety of ferroelectric and electrode materials are also highlighted, and recent advances in the fundamental understanding of ferroelectricity and degradation phenomena in thin films are addressed. Topics include: processing of Pb-based ferroelectrics; processing of Bi-based ferroelectrics; ferroelectric nonvolatile memories - technology, fundamentals and integration; integration and electrodes; epitaxial ferroelectric films; domains and nanostructures; piezoelectrics and pyroelectrics; ferroelectric gates; thin films for RF applications and high-permittivity materials.

Author : Materials Research Society. Meeting
Publisher :
Page : 456 pages
File Size : 38,84 MB
Release : 2002-05
Category : Technology & Engineering
ISBN :

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author : R. W. Schwartz
Publisher :
Page : 610 pages
File Size : 24,95 MB
Release : 2000-08-17
Category : Technology & Engineering
ISBN :

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This book, the eighth in a popular series from MRS, features the latest technical information on ferroelectric thin films from an international mix of academia, industry and government organizations. Recent results for DRAM and FERAM devices, as well as enhancements in material performance for these applications, are presented. Significant advances in understanding leakage current, frequency dependence of the coercive field, hydrogen annealing effects, piezoelectric constants, and domain switching responses are highlighted. The development of ferroelectric thin films for piezoelectric applications are also reviewed, as are improved film-fabrication procedures including chemical vapor deposition and chemical solution deposition. Topics include: BST thin films and DRAM; integration and electrodes; Bi-based thin-film ferroelectrics; Pb-based thin-film ferroelectrics; fundamental properties of thin-film ferroelectrics; ferroelectric gate materials and devices; and piezoelectric, pyro-electric and capacitor devices and novel processing strategies.

Author : Edward R. Myers
Publisher :
Page : 376 pages
File Size : 39,17 MB
Release : 1990-11-16
Category : Technology & Engineering
ISBN :

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author : Robert E. Jones
Publisher :
Page : 800 pages
File Size : 10,31 MB
Release : 1999-06-07
Category : Technology & Engineering
ISBN :

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author : Alexander Tagantsev
Publisher : Springer Science & Business Media
Page : 828 pages
File Size : 48,29 MB
Release : 2011-03-02
Category : Science
ISBN : 1441914226

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At present, the marketplace for professionals, researchers, and graduate students in solid-state physics and materials science lacks a book that presents a comprehensive discussion of ferroelectrics and related materials in a form that is suitable for experimentalists and engineers. This book proposes to present a wide coverage of domain-related issues concerning these materials. This coverage includes selected theoretical topics (which are covered in the existing literature) in addition to a plethora of experimental data which occupies over half of the book. The book presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observations of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. "Domains in Ferroic Crystals and Thin Films" covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In other textbooks on solid state physics, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In contrast, "Domains in Ferroic Crystals and Thin Films" concentrates on domain-related phenomena in nonmagnetic ferroics. These materials are still inadequately represented in solid state physics textbooks and monographs.

Author : Carlos Paz de Araujo
Publisher : Taylor & Francis US
Page : 598 pages
File Size : 27,66 MB
Release : 1996
Category : Science
ISBN : 9782884491976

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The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.

Author : Bruce Tuttle
Publisher :
Page : 658 pages
File Size : 15,33 MB
Release : 1995-08-08
Category : Technology & Engineering
ISBN :

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Papers from the fall 1994 symposium present research and developments from academia, government, organizations, and industry in ferroelectric thin films, organized in sections on characterization, layered structure ferroelectrics, photonic phenomena, process integration, dram thin film technology, solution deposition, and piezoelectric and IR thin film technology. Highlights include the first public technical disclosures of Y1 nonvolatile memory material. Annotation copyright by Book News, Inc., Portland, OR