[PDF] Fabrication Of Photonic Microstructures In Group Iii Nitride Material eBook

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Page : 16 pages
File Size : 24,82 MB
Release : 2003
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The research program at Kansas State University is to develop innovative approaches for fabricating high quality III- nitride QWs, heterostructures, microstructures, and micro-devices and to study their optical and optoelectronic properties. By optimizing the epilayer mobilities and optical emission properties, we have produced GaN, Al(x)Ga(1-x)N (x up to 1), In(x)Ga(1-x)N (x

Author : Kwai Hei Li
Publisher : Springer
Page : 118 pages
File Size : 37,20 MB
Release : 2015-12-08
Category : Technology & Engineering
ISBN : 3662486091

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This book describes the design and fabrication of novel nanostructures in III-nitride material systems. It introduces an inexpensive and ultra-efficient nanopatterning method – nanosphere lithography (NSL) – used to develop diversely functional nanostructures, including clover-shaped photonic crystals, nanorings, and nanolenses. Furthermore, the research findings previously distributed in various international scientific journals and conference papers are brought together and methodically presented in a unified form. The book is of interest to postgraduate students, university researchers, R&D engineers and scientists in the fields of nanoelectronics, optoelectronics and photonics.

Author : Sylvain Sergent
Publisher :
Page : 170 pages
File Size : 49,94 MB
Release : 2010
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This work deals with the insertion of GaN quantum dots (QDs) in (Al,Ga)N-based optical nanocavities for the realization of novel photonic devices operating in the near UV range (300-400 nm) at room temperature (RT). The originality of this work is the use of silicon substrates to circumvent the inertness of group-III nitride materials and facilitate the realization of free-standing nanocavities. The main drawback of this approach is that optically active hétérostructures have to be grown close to the silicon substrate, typically 50 nm above the hetero-interface, in order to fabricate single mode operation devices. We first study the growth of GaN / (Al,Ga) N QD stacks in thin épitaxié. We demonstrate the possibility to obtain a wide range of QD densities from 10 [puissance]8 cm -2 to a few 1011 cm -2. Despite the vicinity of the silicon substrate interface, we evidence the good quality of optical properties and especially the limited photoluminescence temperature-dependence of such QD stacks. We the optimize the fabrication processes of free-standing nanocavities : microdisk resonators are obtained through a classical top-down approach whereas two-dimensional photonic crystal (2D PC) cavities and up to 6600 in microdisk resonators. Using such optical resonators, work is ongoing to demonstrate both RT lasing and Purcell effect at short wavelength.

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Page : pages
File Size : 42,80 MB
Release : 2009
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III-nitride photonic devices such as photodetectors (PDs), light emitting diode (LEDs), solar cells and optical waveguide amplifiers were designed, fabricated and characterized. High quality AlN epilayers were grown on sapphire and n-SiC substrates by metal organic chemical vapor deposition and utilized as active DUV photonic materials for the demonstration of metal-semiconductor-metal (MSM) detectors, Schottky barrier detectors, and avalanche photodetectors (APDs). AlN DUV PDs exhibited peak responsivity at 200 nm with a very sharp cutoff wavelength at 207 nm and extremely low dark current (

Author : Roberto Osellame
Publisher : Springer Science & Business Media
Page : 485 pages
File Size : 12,12 MB
Release : 2012-03-05
Category : Science
ISBN : 364223366X

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Femtosecond laser micromachining of transparent material is a powerful and versatile technology. In fact, it can be applied to several materials. It is a maskless technology that allows rapid device prototyping, has intrinsic three-dimensional capabilities and can produce both photonic and microfluidic devices. For these reasons it is ideally suited for the fabrication of complex microsystems with unprecedented functionalities. The book is mainly focused on micromachining of transparent materials which, due to the nonlinear absorption mechanism of ultrashort pulses, allows unique three-dimensional capabilities and can be exploited for the fabrication of complex microsystems with unprecedented functionalities.This book presents an overview of the state of the art of this rapidly emerging topic with contributions from leading experts in the field, ranging from principles of nonlinear material modification to fabrication techniques and applications to photonics and optofluidics.

Author : Ernst Obermeier
Publisher : Springer
Page : 1763 pages
File Size : 14,41 MB
Release : 2016-05-12
Category : Technology & Engineering
ISBN : 3642594972

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The Conference is the premier international meeting for the presentation of original work addressing all aspects of the theory, design, fabrication, assembly, packaging, testing and application of solid-state sensors, actuators, MEMS, and microsystems.

Author : Jian-Jang Huang
Publisher : Woodhead Publishing
Page : 673 pages
File Size : 35,67 MB
Release : 2014-02-14
Category : Technology & Engineering
ISBN : 0857099302

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The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations. Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting. Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting