[PDF] Efficiency Enhancement For Nanoelectronic Transport Simulations eBook

Author : Jun Huang
Publisher : Open Dissertation Press
Page : pages
File Size : 27,2 MB
Release : 2017-01-26
Category :
ISBN : 9781361331750

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This dissertation, "Efficiency Enhancement for Nanoelectronic Transport Simulations" by Jun, Huang, 黃俊, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling. It has also been utilized to build novel devices, such as the band-to-band tunneling field-effect transistors (FETs). Therefore, it presages accurate quantum transport simulations, which not only allow quantitative understanding of the device performances but also provide physical insight and guidelines for device optimizations. However, quantum transport simulations usually require solving repeatedly the Green's function or the wave function of the whole device region with open boundary treatment, which are computationally cumbersome. Moreover, to overcome the short-channel effects, modern devices usually employ multi-gate structures that are three-dimensional, making the computation very challenging. It is the major target of this thesis to enhance the simulation efficiency by proposing several fast numerical algorithms. The other target is to apply these algorithms to study the physics and performances of some emerging electronic devices. First, an efficient method is implemented for real space simulations with the effective mass approximation. Based on the wave function approach, asymptotic waveform evaluation combined with a complex frequency hopping algorithm is successfully adopted to characterize electron conduction over a wide energy range. Good accuracy and efficiency are demonstrated by simulating several n-type multi-gate silicon FETs. This technique is valid for arbitrary potential distribution and device geometry, making it a powerful tool for studying n-type silicon nanowire (SiNW) FETs in the presence of charged impurity and surface roughness scattering. Second, a model order reduction (MOR) method is proposed for multiband simulation of nanowire structures. Employing three- or six-band k.p Hamiltonian, the non-equilibrium Green's function (NEGF) equations are projected into a much smaller subspace constructed by sampling the Bloch modes of each cross-section layer. Together with special sampling schemes and Krylov subspace methods for solving the eigenmodes, large cross-section p-type SiNW FETs can be simulated. A novel device, junctionless FET, is then investigated. It is found that its doping density, channel orientation, and channel size need to be carefully optimized in order to outperform the classical inversion-mode FET. With a spurious band elimination process, the MOR method is subsequently extended to the eight-band k.p model, allowing simulation of band-to-band tunneling devices. In particular, tunneling FETs with indium arsenide (InAs) nanowire channel are studied, considering different channel orientations and configurations with source pockets. Results suggest that source pocket has no significant impact on the performances of the nanowire device due to its good electrostatic integrity. At last, improvements are made for open boundary treatment in atomistic simulations. The trick is to condense the Hamiltonian matrix of the periodic leads before calculating the surface Green's function. It is very useful for treating leads with long unit cells. DOI: 10.5353/th_b5153685 Subjects: Nanoelectronics - Mathematical methods

Author : Yu Zhu
Publisher : World Scientific
Page : 436 pages
File Size : 29,98 MB
Release : 2016-05-20
Category : Technology & Engineering
ISBN : 9813141441

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Computational nanoelectronics is an emerging multi-disciplinary field covering condensed matter physics, applied mathematics, computer science, and electronic engineering. In recent decades, a few state-of-the-art software packages have been developed to carry out first-principle atomistic device simulations. Nevertheless those packages are either black boxes (commercial codes) or accessible only to very limited users (private research codes). The purpose of this book is to open one of the commercial black boxes, and to demonstrate the complete procedure from theoretical derivation, to numerical implementation, all the way to device simulation. Meanwhile the affiliated source code constitutes an open platform for new researchers. This is the first book of its kind. We hope the book will make a modest contribution to the field of computational nanoelectronics.

Author : Dragica Vasileska
Publisher : Springer Science & Business Media
Page : 450 pages
File Size : 12,21 MB
Release : 2011-06-10
Category : Technology & Engineering
ISBN : 1441988408

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This book surveys the advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices. It systematically describes theoretical approaches and the numerical solutions that are used in explaining the operation of both power devices as well as nano-scale devices. It clearly explains for what types of devices a particular method is suitable, which is the most critical point that a researcher faces and has to decide upon when modeling semiconductor devices.

Author : François Triozon
Publisher : John Wiley & Sons
Page : 341 pages
File Size : 28,97 MB
Release : 2016-11-22
Category : Technology & Engineering
ISBN : 111876188X

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Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.

Author : Ling Zang
Publisher : Springer Science & Business Media
Page : 937 pages
File Size : 19,93 MB
Release : 2011-09-06
Category : Technology & Engineering
ISBN : 0857296388

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Reflecting the rapid growth of nanotechnology research and the potential impact of the growing energy crisis, Energy Efficiency and Renewable Energy Through Nanotechnology provides comprehensive coverage of cutting-edge research in the energy-related fields of nanoscience and nanotechnology, which aim to improve energy efficiency and the generation of renewable energy. Energy Efficiency and Renewable Energy Through Nanotechnology tightly correlates nanotechnology with energy issues in a general, comprehensive way that makes it not only suitable as a desk reference for research, but also as a knowledge resource for the non-expert general public. Readers will find Energy Efficiency and Renewable Energy Through Nanotechnology useful in a variety of ways, ranging from the creation of energy policy, to energy research development, and to education in nanotechnology and its application to energy-related problems. It can also be used as a primary or supplementary textbook for energy-related courses for advanced undergraduate and graduate students.

Author : Trupti Ranjan Lenka
Publisher : Springer Nature
Page : 496 pages
File Size : 45,92 MB
Release : 2021-09-09
Category : Technology & Engineering
ISBN : 9811637679

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The book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2021). The volume includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and will be immensely useful to academic researchers and practitioners in the industry who work in this field.

Author : Mohamed F. El-Amin
Publisher : Elsevier
Page : 432 pages
File Size : 22,36 MB
Release : 2023-06-17
Category : Technology & Engineering
ISBN : 0323905129

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Numerical Modeling of Nanoparticle Transport in Porous Media: MATLAB/PYTHON Approach focuses on modeling and numerical aspects of nanoparticle transport within single- and two-phase flow in porous media. The book discusses modeling development, dimensional analysis, numerical solutions and convergence analysis. Actual types of porous media have been considered, including heterogeneous, fractured, and anisotropic. Moreover, different interactions with nanoparticles are studied, such as magnetic nanoparticles, ferrofluids and polymers. Finally, several machine learning techniques are implemented to predict nanoparticle transport in porous media. This book provides a complete full reference in mathematical modeling and numerical aspects of nanoparticle transport in porous media. It is an important reference source for engineers, mathematicians, and materials scientists who are looking to increase their understanding of modeling, simulation, and analysis at the nanoscale. Explains the major simulation models and numerical techniques used for predicting nanoscale transport phenomena Provides MATLAB codes for most of the numerical simulation and Python codes for machine learning calculations Uses examples and results to illustrate each model type to the reader Assesses major application areas for each model type

Author : Yu Zhu (Physicist)
Publisher :
Page : 436 pages
File Size : 49,28 MB
Release : 2016
Category : Electron transport
ISBN : 9789813141438

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"Computational nanoelectronics is an emerging multi-disciplinary field covering condensed matter physics, applied mathematics, computer science, and electronic engineering. In recent decades, a few state-of-the-art software packages have been developed to carry out first-principle atomistic device simulations. Nevertheless those packages are either black boxes (commercial codes) or accessible only to very limited users (private research codes). The purpose of this book is to open one of the commercial black boxes, and to demonstrate the complete procedure from theoretical derivation, to numerical implementation, all the way to device simulation. Meanwhile the affiliated source code constitutes an open platform for new researchers. This is the first book of its kind. We hope the book will make a modest contribution to the field of computational nanoelectronics"--