[PDF] Dielectric Material Integration For Microelectronics eBook

Author : Mikhail Baklanov
Publisher : John Wiley & Sons
Page : 508 pages
File Size : 23,84 MB
Release : 2007-04-04
Category : Technology & Engineering
ISBN : 0470065419

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The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.

Author : Paul S. Ho
Publisher : Springer Science & Business Media
Page : 323 pages
File Size : 27,82 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 3642559085

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Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for

Author : Shyam P Muraka
Publisher : Elsevier
Page : 459 pages
File Size : 16,39 MB
Release : 2003-10-13
Category : Science
ISBN : 0080521959

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Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package. * Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume * written by renowned experts in the field * Provides an up-to-date starting point in this young research field.

Author : Howard Huff
Publisher : Springer Science & Business Media
Page : 723 pages
File Size : 17,12 MB
Release : 2005-11-02
Category : Technology & Engineering
ISBN : 3540264620

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Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.

Author : R.A. Levy
Publisher : Springer Science & Business Media
Page : 992 pages
File Size : 33,92 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9400909179

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The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.

Author : Niladri Pratap Maity
Publisher : CRC Press
Page : 248 pages
File Size : 29,57 MB
Release : 2020-12-18
Category : Science
ISBN : 1000527441

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This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Author : Ehrenfried Zschech
Publisher : Springer Science & Business Media
Page : 498 pages
File Size : 30,47 MB
Release : 2006-07-02
Category : Technology & Engineering
ISBN : 1846282357

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This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.

Author : Yi-Lung Cheng
Publisher :
Page : 0 pages
File Size : 26,66 MB
Release : 2022
Category : Electronic books
ISBN :

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To provide high speed, low dynamic power dissipation, and low cross-talk noise for microelectronic circuits, low-dielectric-constant (low-k) materials are required as the inter- and intra-level dielectric (ILD) insulator of the back-end-of-line interconnects. Porous low-k materials have low-polarizability chemical compositions and the introducing porosity in the film. Integration of porous low-k materials into microelectronic circuits, however, poses a number of challenges because the composition and porosity affected the resistance to damage during integration processing and reduced the mechanical strength, thereby degrading the properties and reliability. These issues arising from porous low-k materials are the subject of the present chapter.