[PDF] Development Of Thin Film Electroluminescent Display Techniques eBook

Development Of Thin Film Electroluminescent Display Techniques Book in PDF, ePub and Kindle version is available to download in english. Read online anytime anywhere directly from your device. Click on the download button below to get a free pdf file of Development Of Thin Film Electroluminescent Display Techniques book. This book definitely worth reading, it is an incredibly well-written.

Development of Thin Film Electroluminescent Display Techniques

Author : E. J. Soxman
Publisher :
Page : 36 pages
File Size : 42,89 MB
Release : 1967
Category : Electroluminescent display systems
ISBN :

GET BOOK

An electroluminescent display panel of the cross-grid-matrix-type was fabricated on a 10-3/4 x 10-3/4-inch glass substrate using improved vacuum deposition procedures and a high brightness manganese-doped ZnS phosphor. This panel contained 256 x 256 active elements within an area of approximately 7 x 7 inches. Linear resolution was 36 elements per inch with a cross-conductor width of 0.020 inch and a separation of 0.007 inch. The display panel was successfully used as a viewing screen for rear-projected images. The brightness-voltage relationship of the thin film phosphor was such that a cross-suppression ratio in excess of 10,000 to 1 was achieved with an excited element brightness of 100 ft-L. Performance measurements indicated that the optimum drive frequency was about 15 kHz. For pulsed operation, a burst frequency of 37.5 Hz, a carrier frequency of 15 kHz, and a duty cycle of 0.25 percent gave an average brightness of a few foot-Lamberts. Useful operating lifetime of several hundred hours under the above conditions was indicated by preliminary data. The variation in brightness uniformity over a group of cells near the center of the panel was less than 7 percent at an average brightness level of 16 ft-L.A brightness reduction of about 12 percent was observed at a single cell when the contacting configuration was varied on the stannic oxide electrode. (Author).

Electroluminescent Display Technology

Author :
Publisher :
Page : 13 pages
File Size : 22,87 MB
Release : 1980
Category :
ISBN :

GET BOOK

The development of the current high contrast, sunlight legible, thin- film electroluminescent display technology will be reviewed and device structures and operating characteristics will be described. Drive and addressing considerations will be presented in relation to device types, power dissipation, multiplexing and viewability. An overview of the industry status will be given including device availability and problems remaining to be solved. Applications of the technology will be reviewed covering both user requirements and device capabilities. A survey of future prospects will cover improvements in efficiency, multicolor displays and various device configurations. (Author).

Study of Electroluminescent Display Techniques and Evaluation of a Thin Film Cross-grid Display Panel

Author : T. K. Lakshmanan
Publisher :
Page : 53 pages
File Size : 24,30 MB
Release : 1965
Category :
ISBN :

GET BOOK

A study was conducted of the state-of-the-art of electroluminescent display techniques applicable to simulation of on-board displays of future vehicles and displaying computer and/or video information for use in training devices. An evaluation was made of the various fabrication techniques to determine the one with greatest potential for producing a high resolution, bright cross-grid type panel display. A thin film cross-grid panel, 9 in. x 9 in. with 258 x 258 lines was fabricated and evaluated to determine operational characteristics and limitations. Some basic considerations were given to driving electronics to determine designs for maximum flexibility for computer generated inputs. (Author).

Electroluminescent Displays

Author : Yoshimasa A. Ono
Publisher : World Scientific
Page : 184 pages
File Size : 33,84 MB
Release : 1995
Category : Science
ISBN : 9810219210

GET BOOK

This book discusses recent developments in electroluminescent (EL) displays, in particular thin-film EL displays, which are all-solid emissive displays with fast response, wide viewing angle, high resolution, wide operating temperature ranges and good display qualities. First, the characteristics of four types of EL devices are presented, and the physics of ac thin-film EL devices are detailed, including ideal models, measuring and evaluation methods, high-field electronic transport and properties of phosphor materials. The book emphasizes recent developments in phosphor materials for color thin-film EL devices based on ZnS, SrS, CaS and CaGa2S4, and multicolor thin-film EL panels in four-panel structures. Other important features discussed are drive methods and reliability issues.

Thin Film Growth Techniques for Low-Dimensional Structures

Author : R.F.C. Farrow
Publisher : Springer Science & Business Media
Page : 548 pages
File Size : 13,13 MB
Release : 2013-03-09
Category : Technology & Engineering
ISBN : 1468491458

GET BOOK

This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

Development of Laterally Emitting Alternating Current Thin Film Electroluminescent Devices, LETFELs, for Electrophotographic Printing and Helmet Mounted Displays

Author : Robert Stevens
Publisher :
Page : pages
File Size : 32,2 MB
Release : 1994
Category :
ISBN :

GET BOOK

The design of an electroluminescent device is presented which facilitates the manufacture of 600 dpi electrophotographic image bar arrays. Matrix addressed laterally emitting alternating current thin film electroluminescent devices, LETFELs, provide intense light sources. Electroluminescent materials are deposited on pre-fabricated 4" Si substrates by RF magnetron sputtering from ZnS:Mn and ZnS:S powder and Y2O3 sintered targets. Silicon thin film technology is utilised to pattern A1 and poly-Si conducting networks which address a linear arrays of LETFEL devices. Micro-fabrication of LETFEL materials by Ar ion sputtering and wet-chemical etching produce via holes for metallisation and light emitting facets. Automated dicing of fabricated wafers define the LETFEL die. Pick-and-place techniques butt die end-to-end to produce a linear array. Implementation of a 6 to 1 level of matrix addressing for the preferred LETFEL die, ensures optimisation of cost, excitation frequency, lateral brightness, manufacturability, yield and the use of presently available drive electronics and assembly processes. High voltage bipolarity pulses combined with low voltage pulse positioning control the LETFEL array. Worst case electrical analysis suggests pulse widths of 5us, which can be configured to 8.3kHz excitation frequency. This corresponds to a forward brightness of 53,000fL for a conventional LETFEL structure and is insufficient for 8ppm printing. A novel barrier layer structure incorporated into fabricated wafers has brightnesses which exceeds the requirement for 8 ppm, when driven at lower excitation frequencies. An efficient out-coupling process has been identified for miniature displays. Presently micro-mirrors fabricated from SiO2 reflect the direct lateral emission through 90 degrees.....

Thin Film Structures in Energy Applications

Author : Suresh Babu Krishna Moorthy
Publisher : Springer
Page : 300 pages
File Size : 30,47 MB
Release : 2015-03-10
Category : Technology & Engineering
ISBN : 3319147749

GET BOOK

This book provides a comprehensive overview of thin film structures in energy applications. Each chapter contains both fundamentals principles for each thin film structure as well as the relevant energy application technologies. The authors cover thin films for a variety of energy sectors including inorganic and organic solar cells, DSSCs, solid oxide fuel cells, thermoelectrics, phosphors and cutting tools.