[PDF] Development Of Terahertz Qcls eBook

Author : Sushil Kumar (Ph. D.)
Publisher :
Page : 340 pages
File Size : 26,94 MB
Release : 2007
Category :
ISBN :

GET BOOK

The terahertz or the far-infrared frequency range of the electromagnetic spectrum (...) has historically been technologically underdeveloped despite having many potential applications, primarily due to lack of suitable sources of coherent radiation. Following on the remarkable development of mid-infrared (...) quantum-cascade lasers (QCLs) in the past decade, this thesis describes the development of electrically-pumped terahertz quantum-cascade lasers in GaAs/AlsGal_. As heterostructures that span a spectral range of 1.59 - 5.0 THz (...). A quantum-cascade laser (QCL) emits photons due to electronic intersubband transitions in the quantum-wells of a semiconductor heterostructure. The operation of terahertz QCLs at frequencies below the Reststrahlen band in the semiconductor (...), is significantly more challenging as compared to that of the mid-infrared QCLs. Firstly, due to small energy separation between the laser levels various intersubband scattering mechanisms are activated, which make it difficult to selectively depopulate the lower laser level. Additionally, as electrons gain enough kinetic energy in the upper laser level thermally activated longitudinal-optical (LO) phonon scattering reduces the level lifetime and makes it difficult to sustain population inversion at higher temperatures. Secondly, waveguide design for terahertz mode confinement is also more challenging due to higher free-carrier losses in the semiconducting doped regions at the terahertz frequencies. For successful designs reported in this work, the lower radiative state depopulation is achieved by a combination of resonant-tunneling and fast LO phonon scattering, which allow robust operation even at relatively high temperatures. An equally important enabling mechanism for these lasers is the development of metal-metal waveguides, which provide low waveguides losses, and strong mode confinement due to subwavelength mode localization in the vertical dimension. With these techniques some record performances for terahertz QCLs are demonstrated including the highest pulsed operating temperature of 169 K, the highest continuous-wave (cw) operating temperature of 117 K, and the highest optical power output (248 mW in pulsed and 138 mW in cw at 5 K) for any terahertz QCL. Towards the bigger goal of realizing a 1-THz solid-state laser to ultimately bridge the gap between electronic and optical sources of electromagnetic radiation, QCLs with a unique one-well injection scheme, which minimizes intersubband absorption losses that occur at longer wavelengths, are developed. Based on this scheme a QCL operating at 1.59 THz (A - 189 ym) is realized, which is amongst the lowest frequency solid-state lasers that operate without the assistance of a magnetic field. This thesis also reports on the development of distributed-feedback lasers in metal-metal waveguides to obtain single-mode operation, with greater output power and better beam quality. The subwavelength vertical dimension in these waveguides leads to a strongly coupled DFB action and a large reflection from the end-facets, and thus conventional coupled-mode theory is not directly applicable to the DFB design. A design technique with precise control of phase of reflection at the end-facets is developed with the aid of finite-element analysis, and with some additional unique design and fabrication methods, robust DFB operation has been obtained. Single-mode surface-emitting terahertz QCLs operating up to - 150 K are demonstrated, with different grating devices spanning a range of approximately 0.35 THz around v - 3 THz using the same gain medium. A single-lobed far-field radiation pattern, higher output power due to surface-emission, and a relatively small degradation in temperature performance compared to the Fabry-Perot ridge lasers makes these DFB lasers well suited for practical applications that are being targeted by the terahertz quantum-cascade lasers.

Author : Christopher Curwen
Publisher :
Page : 184 pages
File Size : 11,14 MB
Release : 2019
Category :
ISBN :

GET BOOK

Terahertz (THz) quantum-cascade lasers (QCLs) are an emerging semiconductor source of compact, high-power THz radiation. Though first realized more than 15 years ago, THz QCLs continue to suffer from poor beam quality and outcoupling efficiency due to the subwavelength nature of the semiconductor ridge-waveguides typically used. In this thesis, a new technique is discussed for obtaining high power and good beam quality from THz QCLs, the THz quantum-cascade external cavity surface emitting laser (QC-VECSEL). The concept of the QC-VECSEL is to use THz QC-gain material to design a millimeter-scale reflective amplifying surface, or metasurface, for free space THz waves and incorporate it into a free-space THz resonant cavity to provide feedback to the amplification and form a laser. In this manner, the beam shape is determined by the external cavity, which supports fundamental Gaussian solutions. Further, the metasurface itself is composed of a subwavelength array (to prevent diffraction) of surface-coupled QC-elements whose properties, such as phase and polarization response, can be engineered on a unit cell basis allowing for a variety of unique experiments. The power output power of the QC-VECSEL can be scaled by either increasing the size of the metasurface, or increasing the density (or fill factor) of QC-elements across the surface. In this work, large area metasurfaces with high fill-factor have been studied and demonstrated up to 1.35 W of peak output power for a QC-VECSEL operating at 3.4 THz at a heat sink temperature of 4 K. A peak wall-plug efficiency of ~2% is demonstrated, but observation of self lasing from the metasurface at high bias (when no external cavity is provided) in combination with a simultaneous roll-off in VECSEL output power suggests even higher efficiency can be achieved with improved suppression of self-lasing modes. The output beam is well fit to a Gaussian distribution with a 4 degree full-width half-maximum divergence angle. In addition to power and beam quality, the QC-VECSEL opens the door to many interesting and unique studies via engineering of the metasurface properties and external cavity. Much of this thesis describes frequency tuning of QC-VECSELs based on broadband metasurfaces by varying the length of the external cavity. By making the external cavity extremely short (comparable to the operating wavelength), we are able to push all other external cavity modes outside of the gain bandwidth of the metasurface and demonstrate more than 20% fractional single-mode tuning around a center operating frequency of 3.5 THz. Because there are almost no diffraction losses at such a short cavity, the size of the metasurface could be reduced, allowing for continuous wave lasing with up to 20 milliwatts of output power at a heatsink temperature of 77 K, though the output power is highly variable as the reflectance of the output coupler has a strong frequency dependence. At the time of writing this, these are record performances in both frequency tuning and high-temperature continuous wave operation for lasers based on THz QC-gain material. The amount of tuning that be achieved with this approach is limited by the phase response of the metasurface, which squeezes the external cavity modes closer together in the spectral domain. Development of metasurfaces with lower electrical power consumption and higher conversion efficiency for the purpose of improving continuous wave performance. A sparse, patch-based metasurface with reduced power consumption is demonstrated, though the design was not optimal and only showed a 20% reduction in current draw compared to the previously demonstrated metasurfaces. Routes towards improving the performance are discussed. The last subject discussed is the design of a mid-infrared (IR) QC-VECSEL. Due to the large metal losses at mid-IR frequencies compared to THz, the technique used to develop THz QC-VECSELs cannot be directly extended to the mid-IR. We propose a scheme based on a diffraction grating to provide surface coupling of the QC-gain material. Progress on experimental realization is discussed, but lasing has not yet been observed.

Author : Mohammed Salih
Publisher :
Page : pages
File Size : 19,24 MB
Release : 2011
Category :
ISBN :

GET BOOK

THz QCLs, based on a three-well resonant-phonon depopulation active region design, have been studied in depth using semi-insulating surface plasmon waveguides. Lasing frequencies between 2.3 to 4.0 THz have been investigated, together with a detailed evaluation of the effect of cavity length on devices performance. The effect of reducing the thickness of the THz QCL active region from 10 to 5 IJm was investigated, and the influence of active region thickness on lattice temperatures compared. Thinner active regions potentially make it possible to obtain continuous-wave (CW) operation from three-well, resonant-phonon depopulation QCLs, which is a requirement for many applications. It was demonstrated that the laser cavity of edge-emitting THz QCLs could be defined using an etched rather than a cleaved facet. Three emission frequencies ( - 3.0, - 3.5 and - 4.0 THz) with two different facet angles (et:> = - 50° and et:> = - 42°) were studied and device performance were compared. The new THz QCL devices with sloped facets could open up the possibility of monolithic integration of QCLs into terahertz circuits. They also remove the requirement for THz QCLs to be fabricated perpendicular to cleavage planes of the underlying crystal structure. From the demonstration of lasing from THz QCLs with angled facets, the possibility of coupling surface acoustic waves (SAWs) with THz QCLs is investigated. The aim was to use SAWs propagating through upper surface of the waveguide of the THz QCL to introduce modulation of the gain region. This would have significant application to spectroscopy at THz frequencies. SAW propagate across a QCL mesa was demonstrated, and fully investigated devices were fabricated and tested.

Author : Tasmim Alam
Publisher : Cuvillier Verlag
Page : 132 pages
File Size : 41,65 MB
Release : 2020-10-29
Category : Science
ISBN : 3736962975

GET BOOK

Quantum cascade lasers (QCLs) are attractive for high-resolution spectroscopy because they can provide high power and a narrow linewidth. They are particularly promising in the terahertz (THz) range since they can be used as local oscillators for heterodyne detection as well as transmitters for direct detection. However, THz QCL-based technologies are still under development and are limited by the lack of frequency tunability as well as the frequency and output power stability for free-running operation. In this dissertation, frequency tuning and linewidth of THz QCLs are studied in detail by using rotational spectroscopic features of molecular species. In molecular spectroscopy, the Doppler eff ect broadens the spectral lines of molecules in the gas phase at thermal equilibrium. Saturated absorption spectroscopy has been performed that allows for sub-Doppler resolution of the spectral features. One possible application is QCL frequency stabilization based on the Lamb dip. Since the tunability of the emission frequency is an essential requirement to use THz QCL for high-resolution spectroscopy, a new method has been developed that relies on near-infrared (NIR) optical excitation of the QCL rear-facet. A wide tuning range has been achieved by using this approach. The scheme is straightforward to implement, and the approach can be readily applied to a large class of THz QCLs. The frequency and output stability of the local oscillator has a direct impact on the performance and consistency of the heterodyne spectroscopy. A technique has been developed for a simultaneous stabilization of the frequency and output power by taking advantage of the frequency and power regulation by NIR excitation. The results presented in this thesis will enable the routine use of THz QCLs for spectroscopic applications in the near future.

Author : Hajime Asahi
Publisher : John Wiley & Sons
Page : 510 pages
File Size : 23,67 MB
Release : 2019-04-15
Category : Science
ISBN : 111935501X

GET BOOK

Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

Author : Dan Botez
Publisher : Cambridge University Press
Page : 552 pages
File Size : 42,60 MB
Release : 2023-09-14
Category : Technology & Engineering
ISBN : 1108570607

GET BOOK

Learn how the rapidly expanding area of mid-infrared and terahertz photonics has been revolutionized in this comprehensive overview. State-of-the-art practical applications are supported by real-life examples and expert guidance. Also featuring fundamental theory enabling you to improve performance of both existing and future devices.

Author : Chun Wang Ivan Chan
Publisher :
Page : 251 pages
File Size : 22,22 MB
Release : 2015
Category :
ISBN :

GET BOOK

Terahertz Quantum Cascade Lasers (THz QCLs) are arguably the most promising technology today for the compact, efficient generation of THz radiation. Their main limitation is that they require cryogenic cooling, which dominates their ownership cost. Therefore, achieving room-temperature operation is essential for the widespread adoption of THz QCLs. This thesis analyzes the limitations of THz QCL maximum lasing temperature (Tmax) and proposes solutions. THz QCL Tmax is hypothesized to be limited by a fundamental trade-off between gain oscillator strength ful and upper-level lifetime [Tau]. This so-called "ful[Tau] tradeoff" is shown to explain the failure of designs which target [Tau] alone. A solution is proposed in the form of highly diagonal (low ful) active region design coupled with increased doping. Experimental results indicate the strategy to be promising, but heavily doped designs are shown to suffer band-bending effects which may deteriorate performance. In order to treat these band-bending effects, which are typically neglected in previous THz QCL designs, a fast transport simulation tool is developed. Scattering integrals are simplified using the assumption of thermalized sub bands. Results comparable to ensemble Monte Carlo are achieved at a fraction of the computational expense. Carrier leakages to continuum states are also investigated, although they are found to have little effect. Other work in this thesis includes the optimization of double-metal THz waveguides to enable Tmax ~ 200 K, a current world record. Furthermore, laser designs to investigate the leakages of carriers to high-energy subbands and continuum states were fabricated and tested; such parasitic leakages are suggested to be small. Finally, the design of gain media for applications is examined, notably the development of 4.7 THz gain media for OI line detection in astrophysics, and the development of broadband heterogeneous gain media for THz comb generation.

Author : Benjamin Stanford Williams
Publisher :
Page : 310 pages
File Size : 24,94 MB
Release : 2003
Category :
ISBN :

GET BOOK

The development of the terahertz frequency range has long been impeded by the relative dearth of compact, coherent radiation sources of reasonable power. This thesis details the development of quantum cascade lasers (QCLs) that operate in the terahertz with photon energies below the semiconductor Reststrahlen band. Photons are emitted via electronic intersubband transitions that take place entirely within the conduction band, where the wavelength is chosen by engineering the well and barrier widths in multiple-quantum-well heterostructures. Fabrication of such long wavelength lasers has traditionally been challenging, since it is difficult to obtain a population inversion between such closely spaced energy levels, and because traditional dielectric waveguides become extremely lossy due to free carrier absorption. This thesis reports the development of terahertz QCLs in which the lower radiative state is depopulated via resonant longitudinal-optical phonon scattering. This mechanism is efficient and temperature insensitive, and provides protection from thermal backfilling due to the large energy separation between the lower radiative state and the injector. Both properties are important in allowing higher temperature operation at longer wavelengths. Lasers using a surface plasmon based waveguide grown on a semi-insulating (SI) GaAs substrate were demonstrated at 3.4 THz in pulsed mode up to 87 K, with peak collected powers of 14 mW at 5 K, and 4 mW at 77 K.

Author : Karun Vijayraghavan
Publisher :
Page : 226 pages
File Size : 24,70 MB
Release : 2014
Category :
ISBN :

GET BOOK

The terahertz (THz) spectral range is devoid of commercially feasible radiation sources, detectors, and components. In particular, THz sources are bulky, complex to operate, and cost-prohibitive - more suited for a research laboratory than a commercial setting. Developing compact and mass-producible sources in the 1 to 6 THz spectral range will open up new avenues for this technology to make a mainstream societal impact. The focus of this thesis is the development of compact, room-temperature terahertz sources based on quantum cascade lasers (QCL) and quantum well technology. QCLs are semiconductor lasers that operate with high power at mid-infrared (mid-IR) and THz frequencies. THz QCLs are the only mW-level average power sources with spectral coverage from 0.8 to 5 THz. However they only work at cryogenic temperatures because they cannot maintain population inversion across the lasing transition at elevated temperatures. Cryogenic cooling makes these sources cumbersome to operate and expensive to manufacture. Room-temperature operation significantly enhances their commercial appeal and a portion of this dissertation investigated the improvement in THz QCL temperature performance using GaAs-Al0.15Ga0.85As double-phonon resonant active region designs. These devices worked up to 173 K and were a substantial improvement compared to prior implementations of double-phonon resonant designs. Room-temperature THz sources that do not require population inversion across the lasing transition can be engineered by combining the field of nonlinear optics with intersubband transitions in quantum well structures. One method of creating inversionless THz lasing is based upon the principle of Raman gain in semiconductors and this thesis explores the design of an intersubband Raman laser (IRL) with GaAs-Al0.33Ga0.67As heterostructures. The primary focus of this dissertation is developing room-temperature, broadly-tunable, monolithic THz sources based on difference-frequency generation (DFG) in mid-IR QCLs. The source active region is quantum-engineered to provide lasing at mid-IR frequencies, [omega]1 and [omega]2, and simultaneously have giant second-order optical nonlinearity for THz generation at frequency [omega] [subscript THz]=[omega]1-[omega]2. This dissertation developed a Cherenkov emission scheme that produced devices with a narrow emission linewidth, 0.12 mW peak power and tuning from 1.55 to 5.7 THz - the largest tuning bandwidth compared to semiconductor technology of similar size and cost.