[PDF] Development Of Low Noise Double Sided Silicon Strip Detector For Cosmic Soft Gamma Ray Compton Camera eBook

Author :
Publisher :
Page : pages
File Size : 43,81 MB
Release : 2005
Category :
ISBN :

GET BOOK

Double-sided silicon strip detector (DSSD) is one of key technologies for constructing a Compton Camera, which is expected to proceed a high-sensitivity soft gamma-ray observation in the energy range of 0.1-20 MeV. The merits of DSSD are its high energy resolution, high scattering efficiency, low radio-activation in the orbit, moderate radiation hardness, smaller Doppler broadening, availability of large-size one, and stable performance. We have developed a low-noise system of DSSD and front-end LSI for the Compton camera, by optimizing geometrical structures of DSSD. We have thus obtained an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at -10 C in the multi-channel reading. Gamma-ray responses such as image flatness and charge splittings were found to be not problematic. We also demonstrated that our system achieved the good angular resolution close to the Doppler-broadening limit in the Compton imaging by two DSSDs.

Author :
Publisher :
Page : pages
File Size : 23,86 MB
Release : 2005
Category :
ISBN :

GET BOOK

A Semiconductor Multiple-Compton Telescope (SMCT) is expected to proceed a high-sensitivity soft gamma-ray observation in the energy range of 0.1-20 MeV. Double-sided silicon strip detector (DSSD) is one of key technologies for constructing SMCT, as well as the high-stopping semiconductor CdTe, because of its high energy resolution and high scattering efficiency. We have developed a low-noise system of DSSD and frontend LSI for SMCT, by optimizing geometrical structures of DSSD. We have thus obtained an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at -10 C in the multi-channel reading. Gamma-ray responses such as image flatness and charge splittings were found to be not problematic. We also demonstrated that our system achieved the good angular resolution close to the Doppler-broadening limit in the Compton imaging by two DSSDs.

Author : T. Mitani
Publisher :
Page : pages
File Size : 48,58 MB
Release : 2004
Category :
ISBN :

GET BOOK

A Compton camera is the most promising approach for gamma-ray detection in the energy region from several hundred keV to MeV, especially for application in high energy astrophysics. In order to obtain good angular resolution, semiconductor detectors such as silicon, germanium and cadmium telluride (CdTe) have several advantages over scintillation detectors, which have been used so far. Based on the recent advances of high resolution CdTe and silicon imaging detectors, we are working on a Si/CdTe Compton camera. We have developed 64-pixel CdTe detectors with a pixel size of 2 mm x 2 mm and double-sided Si strip detectors (DSSDs) with a position resolution of 800 {micro}m. As a prototype Si/CdTe Compton camera, we use a DSSD as a scatterer and two CdTe pixel detectors as an absorber. In order to verify its performance, we irradiate the camera with 100% linearly polarized 170 keV {gamma}-rays and demonstrate the system works properly as a Compton camera. The resolution of the reconstructed scattering angle is 22{sup o} (FWHM). Measurement of polarization is also reported. The polarimetric modulation factor is obtained to be 43%, which is consistent with the prediction of Monte Carlo simulations.

Author :
Publisher :
Page : 4 pages
File Size : 15,93 MB
Release : 1997
Category :
ISBN :

GET BOOK

A wide variety of applications require a hard X-ray or gamma ray detector which combine both good spatial resolution and energy resolution. Double-sided solid-state strip detectors provide this capability. We report on the development of CMOS electronics designed for photon detection with strip detectors. These electronics include a low noise preamplifier, semi-gaussian shaping amplifier, discriminator, and peak detection circuitry. All circuits are designed to operate at low power. Circuits have been duplicated in both NMOS and PMOS to provide both polarities of signals. We have constructed an 8x8 channel system to test these prototype chips. Power consumption for the preamplifier through peak-detector circuit is 4 mW/channel. The test system has a conversion gain of ~35 mV/fC, system noise (equivalent noise charge) of ENC220 e rms (0 pF), and a dynamic range of100:1 in both NMOS and PMOS circuits.

Author : Helmuth Spieler
Publisher : OUP Oxford
Page : 513 pages
File Size : 27,64 MB
Release : 2005-08-25
Category : Technology & Engineering
ISBN : 0191523658

GET BOOK

Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.

Author :
Publisher :
Page : 5 pages
File Size : 10,29 MB
Release : 1993
Category :
ISBN :

GET BOOK

An x-ray detector system, based on a silicon strip detector wire-bonded to a low noise charge-senstive amplifier integrated circuit, has been developed for synchrotron radiation experiments which require very high count rates and good energy resolution. Noise measurements and x-ray spectra were taken using a 6 mm long, 55 [mu]m pitch strip detector in conjunction with a prototype 16-channel charge-sensitive preamplifier, both fabricated using standard 1.2 [mu]m CMOS technology. The detector system currently achieves an energy resolution of 350 eV FWHM at 5.9 key, 2 [mu]s peaking time, when cooled to -5° C.