[PDF] Compound Semiconductors 1998 eBook

Author : H Sakaki
Publisher : CRC Press
Page : 931 pages
File Size : 16,3 MB
Release : 2021-02-01
Category : Science
ISBN : 1000157148

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Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.

Author : K Ploog
Publisher : CRC Press
Page : 568 pages
File Size : 11,3 MB
Release : 2000-01-01
Category : Science
ISBN : 9780750307048

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An international perspective on the latest research, Compound Semiconductors 1999 presents an overview of important developments in all III-V compound semiconductors such as GaAs, InP, and GaN; II-VI compounds such as ZnS, ZnSe, and CdTe; IV-IV compounds such as SiC and SiGe; and IV-VI compounds such as PbTe and SnTe. The book emphasizes piezoelectric (or potentially smart) material heterostructures (Ga, Al, In)N, which will influence future research and development funding. As the preeminent forum for research in compound materials and their applications in devices, this essential library reference is invaluable reading for all researchers in semiconductor physics, and electronic and electrical engineering.

Author : Ferdinand-braun-inst fuer hoechstfrequenztechnik berlin (Germany)
Publisher :
Page : 155 pages
File Size : 29,22 MB
Release : 1998
Category :
ISBN :

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The Final Proceedings for 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits, 24 May 1998-27 May 1998 This is an interdisoplinary conference. Topics include material growth and characterization, recent developments in MESFETS, HEMTs, and HBTs, MMlC-Technology, Microwave and millimeter wave power devices, GaN- Devices, Mesoscopic devices, Optical Ics, Reliability and CharacterIzation, Technological Building Blocks for devices.

Author : Y Arakawa
Publisher : CRC Press
Page : 908 pages
File Size : 26,28 MB
Release : 2002-09-30
Category : Science
ISBN : 9780750308564

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An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical devices, magnetic materials, novel systems, quantum transport, optical characterization, quantum nanostructures, and material growth and characterization. The content encompasses the development of optical and electronic devices based on nitride semiconductors as well as the steady advances in traditional topics like III-V-based electronic and optical devices, growth and processing, and characterization. The book also includes novel research trends in quantum structures, such as quantum wires and dots, and spintronics, which are very promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications, this resource is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.

Author : Ferdinand Scholz
Publisher : CRC Press
Page : 294 pages
File Size : 46,1 MB
Release : 2017-10-06
Category : Science
ISBN : 1351858726

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This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.

Author : A. G. Baca
Publisher : The Electrochemical Society
Page : 230 pages
File Size : 38,85 MB
Release : 2000
Category : Technology & Engineering
ISBN : 9781566772853

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The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR