[PDF] Characterization Of Structural And Electronic Properties Of Nanoscale Semiconductor Device Structures Using Cross Sectional Scanning Probe Microscopy eBook

Author : James Jeremy MacDonald Law
Publisher :
Page : 121 pages
File Size : 25,23 MB
Release : 2009
Category :
ISBN :

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Advances in the synthesis of materials and device structures have accentuated the need to understand nanoscale electronic structure and its implications. Scanning probe microscopy offers a rich variety of highly spatially accurate techniques that can further our understanding of the interactions that occur in nanoscale semiconductor materials and devices. The promising nitride semiconductor materials system suffers from perturbations in local electronic structure due to crystallographic defects. Understanding the electronic properties and physical origin of these defects can be invaluable in mitigating their impacts or eliminating them all together. In the second chapter of this dissertation, scanning capacitance microscopy (SCM) is used to characterize local electronic structure in a-plane n-type gallium nitride. Analysis reveals the presence of a linear, positively charged feature aligned along the direction which likely corresponds to a partial dislocation at the edge of a stacking fault. In the third chapter, conductive atomic force microscopy is used to determine the effects of Ga/N flux on the conductive behavior of reverse-bias leakage paths in gallium nitride grown by molecular beam epitaxy (MBE). Our data reveal a band of fluxes near Ga/N ~̃ 1 for which these pathways cease to be observable. These observations suggest a method for controlling the primary source of reverse-bias Schottky contact leakage in n-type GaN grown by MBE. A deeper understanding of the interaction between macro-scale objects and nanoscale electronic properties is required to bring the exciting new possibilities that semiconductor nanowires offer to fruition. In the fourth chapter, SCM is used to examine the effects of micron-scale metal contacts on carrier modulation and electrostatic behavior in indium arsenide semiconductor nanowires. We interpret a pronounced dependence of capacitance spectra on distance between the probe tip and nanowire contact as a consequence of electrostatic screening of the tip-nanowire potential difference by the large metal contact. These results provide direct experimental verification of contact screening effects on the electronic behavior of nanowire devices and are indicative of the importance of accounting for the effect of large-scale contact and circuit elements on the characteristics of nanoscale electronic devices.

Author : Paula M. Vilarinho
Publisher : Springer Science & Business Media
Page : 503 pages
File Size : 24,5 MB
Release : 2006-06-15
Category : Science
ISBN : 1402030193

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As the characteristic dimensions of electronic devices continue to shrink, the ability to characterize their electronic properties at the nanometer scale has come to be of outstanding importance. In this sense, Scanning Probe Microscopy (SPM) is becoming an indispensable tool, playing a key role in nanoscience and nanotechnology. SPM is opening new opportunities to measure semiconductor electronic properties with unprecedented spatial resolution. SPM is being successfully applied for nanoscale characterization of ferroelectric thin films. In the area of functional molecular materials it is being used as a probe to contact molecular structures in order to characterize their electrical properties, as a manipulator to assemble nanoparticles and nanotubes into simple devices, and as a tool to pattern molecular nanostructures. This book provides in-depth information on new and emerging applications of SPM to the field of materials science, namely in the areas of characterisation, device application and nanofabrication of functional materials. Starting with the general properties of functional materials the authors present an updated overview of the fundamentals of Scanning Probe Techniques and the application of SPM techniques to the characterization of specified functional materials such as piezoelectric and ferroelectric and to the fabrication of some nano electronic devices. Its uniqueness is in the combination of the fundamental nanoscale research with the progress in fabrication of realistic nanodevices. By bringing together the contribution of leading researchers from the materials science and SPM communities, relevant information is conveyed that allows researchers to learn more about the actual developments in SPM applied to functional materials. This book will contribute to the continuous education and development in the field of nanotechnology.

Author : Xiaotian Zhou
Publisher :
Page : 127 pages
File Size : 45,99 MB
Release : 2007
Category :
ISBN : 9789984343143

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As semiconductor devices shrink in size, it becomes more important to characterize and understand electronic properties of the materials and devices at the nanoscale. Scanning probe techniques offers numerous advantages over traditional tools used for semiconductor materials and devices characterization including high spatial resolution, ease of use and multi-functionality for electrical characterization, such as current, potential and capacitance, etc.

Author : A.G. Cullis
Publisher : Springer Science & Business Media
Page : 504 pages
File Size : 46,65 MB
Release : 2008-12-02
Category : Technology & Engineering
ISBN : 1402086156

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This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.

Author : Sergei V Kalinin
Publisher : Springer
Page : 576 pages
File Size : 48,92 MB
Release : 2016-04-01
Category :
ISBN : 9781493939473

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Here is a much-needed general overview of a rapidly developing field. It covers novel scanning probe microscopy (SPM) techniques that are used to characterize a wide range of functional materials, including complex oxides, biopolymers, and semiconductors.

Author : Keun Woo Park
Publisher :
Page : 252 pages
File Size : 21,73 MB
Release : 2013
Category :
ISBN :

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The incorporation of rare earth-V (RE-V) semimetallic nanoparticles embedded in III-V compound semiconductors is of great interest for applications in solid-state devices including multijunction tandem solar cells, thermoelectric devices, and fast photoconductors for terahertz radiation sources and receivers. With regard to those nanoparticle roles in device applications and material itself, electrical and thermal properties of embedded RE-V nanoparticles, including nanoscale morphology, electronic structure, and electrical and thermal conductivity of such nanoparticles are essential to be understood to engineer their properties to optimize their influence on device performance. To understand embedded RE-V semimetallic nanostructures in III-V compound semiconductors, nanoscale characterization tools are essential for analysis their properties incorporated in compound semiconductors. In this dissertation, we used atomic force microscopy (AFM) with other secondary detection tools to investigate nanoscale material properties of semimetallic RE-V and GaAs heterostructures, grown by molecular beam epitaxy. We used scanning capacitance microscopy and conductive AFM techniques to understand electronic and electrical properties of ErAs/GaAs heterostructures. For the electrical properties, this thesis investigates details of statistical analysis of scanning capacitance and local conductivity images contrast to provide insights into (i) nanoparticle structure at length scales smaller than the nominal spatial resolution of the scanned probe measurement, and (ii) both lateral and vertical nanoparticle morphology at nanometer to atomic length scales, and their influence on electrical conductivity. To understand thermal properties of ErAs nanoparticles, in-plane and cross-sectional plane of ErAs/GaAs superlattice structure were investigated with a scanning probe microscopy technique implemented with 3[omega] method for thermal measurement. By performing detailed numerical modeling of thermal transport between thermal probe tip and employed samples, and estimation of additional phonon scattering induced by ErAs nanoparticles, we could understand influences of ErAs nanoparticles on the host GaAs thermal conductivity. Investigation of ErAs semimetallic nanostructure embedded in GaAs matrix with scanned probe microscopy provided detailed understanding of their electronic, electrical and thermal properties. In addition, this dissertation also demonstrates that an atomic force microscope with secondary detection techniques is promising apparatus to understand and investigate intrinsic properties of nanostructure materials, nanoscale charge transports, when the system is combined with detailed modeling and simulations.

Author : Sergei V. Kalinin
Publisher : Springer
Page : 555 pages
File Size : 23,45 MB
Release : 2010-12-10
Category : Technology & Engineering
ISBN : 9781441965677

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The goal of this book is to provide a general overview of the rapidly developing field of novel scanning probe microscopy (SPM) techniques for characterization of a wide range of functional materials, including complex oxides, biopolymers, and semiconductors. Many recent advances in condensed matter physics and materials science, including transport mechanisms in carbon nanostructures and the role of disorder on high temperature superconductivity, would have been impossible without SPM. The unique aspect of SPM is its potential for imaging functional properties of materials as opposed to structural characterization by electron microscopy. Examples include electrical transport and magnetic, optical, and electromechanical properties. By bringing together critical reviews by leading researchers on the application of SPM to to the nanoscale characterization of functional materials properties, this book provides insight into fundamental and technological advances and future trends in key areas of nanoscience and nanotechnology.

Author : Peterson's
Publisher : Peterson's
Page : 2059 pages
File Size : 24,45 MB
Release : 2011-12-30
Category : Study Aids
ISBN : 0768936640

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Graduate Programs in the Physical Sciences, Mathematics, Agricultural Sciences, the Environment & Natural Resources 2012 contains more than 2,900 graduate programs in 59 disciplines-including agriculture and food sciences, astronomy and astrophysics, chemistry, physics, mathematics, environmental sciences and management, natural resources, marine sciences, and more. This guide is part of Peterson's six-volume Annual Guides to Graduate Study, the only annually updated reference work of its kind, provides wide-ranging information on the graduate and professional programs offered by U.S.-accredited colleges and universities in the United States and throughout the world. Informative data profiles for more than 2,900 graduate programs in 59 disciplines, including facts and figures on accreditation, degree requirements, application deadlines and contact information, financial support, faculty, and student body profiles. Two-page in-depth descriptions, written by featured institutions, offer complete details on specific graduate programs, schools, or departments as well as information on faculty research and the college or university. Expert advice on the admissions process, financial support, and accrediting agencies. Comprehensive directories list programs in this volume, as well as others in the graduate series. Up-to-date appendixes list institutional changes since the last addition along with abbreviations used in the guide