[PDF] Spectral Dynamics Of Nonequilibrium Phonons In Ruby eBook

Author : Walter E. Bron
Publisher : Springer Science & Business Media
Page : 682 pages
File Size : 44,22 MB
Release : 2013-11-11
Category : Science
ISBN : 1461325013

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Phonons are always present in the solid state even at an absolute temperature of 0 K where zero point vibrations still abound. Moreover, phonons interact with all other excitations of the solid state and, thereby, influence most of its properties. Historically experimental information on phonon transport came from measurements of thermal conductivity. Over the past two decades much more, and much more detailed, information on phonon transport and on many of the inherent phonon interaction processes have come to light from experiments which use nonequilibrium phonons to study their dynamics. The resultant research field has most recently blossomed with the development of ever more sophisticated experimental and theoretical methods which can be applied to it. In fact, the field is moving so rapidly that new members of the research community have difficulties in keeping up to date. This NATO Advanced Study Institute (ASI) was organized with the objective of overcoming the information barrier between those expert in the field and those who are new to it. Thus it was decided to (i) organize a set of tutorially based lectures covering most of the important facets in the field, and (ii) to produce an Institute proceedings which would serve both as the first general textbook, as well as a valuable reference book, for this field of knowledge.

Author : Xiao-jun Wang
Publisher :
Page : 4 pages
File Size : 33,93 MB
Release : 1992
Category :
ISBN :

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We have investigated the spectral and temporal dynamics associated with phonon decay in the YAG:Pr3+ system at a range of temperature between 9 and 25 K. Nonequilibrium phonons were generated using defect induced one phonon absorption (DlOPA) of far infrared (FIR) radiation. Phonon detection was achieved optically using a variation of absorption vibronic sideband phonon spectroscopy. Far infrared radiation in the frequency range 30 - 113 cm-1 was generated using a transversely excited atmospheric pressure CO2 laser pumped superradiant cell. This configuration produces 50 ns FIR pulses with single pulse energies in the range 1 - 10 mJ. The optical detection pulses were generated using a YAG:Nd3+ pumped dye laser. The generation and detection beams were incident on the sample in a counterpropagating geometry with the phonon generated fluorescence collected at 90 deg. The sample was mounted in a two stage cold cycle refrigerator allowing the temperature to be varied between 9 and 300 K. The sample temperature was determined optically.

Author : William M. Yen
Publisher : Springer Science & Business Media
Page : 319 pages
File Size : 22,56 MB
Release : 2006-01-21
Category : Science
ISBN : 3540459391

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Laser-based optical spectroscopies are powerful and versatile techniques that are continuing to evolve and find new applications. This book presents reviews of recent progress in our understanding of the spectra and dynamical processes of optically excited states of condensed matter, focusing on the advances made possible by the application of laser-based optical spectroscopies. Reviews are given of the optical properties of crystalline and amorphous semiconducting materials and structures, the properties of defect centers in insulators, two-photon nonlinear processes in insulators, optical energy diffusion in inorganic materials, and relaxation in organic materials. The individual chapters emphasize the methodology common to the various investigations. The volume is designed to be suitable as an introduction to applied laser spectroscopy of solids, as well as providing an update on the status of the field.

Author : Charles V. Shank
Publisher :
Page : 520 pages
File Size : 47,37 MB
Release : 1992
Category : Science
ISBN :

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The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. This volume is devoted to different trends in the field which are presently at the forefront of research. Special attention is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, both pulsed and steady-state. and the relaxation kinetics of hot carriers and phonons are considered under various conditions such as temperature, doping and pumping intensity by leading experts in the field.