[PDF] Optimization And Evaluation Of Germanium Vapor Phase Epitaxial Growth Parameters eBook

Author :
Publisher :
Page : 41 pages
File Size : 37,82 MB
Release : 1999
Category :
ISBN :

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This report details the objectives, methodologies, and results for Phase II of the project, "Modeling and Optimization for Epitaxial Growth". This project is a joint effort between the Institute for Systems Research (ISR) and Northrop Grumman Corporation's Electronic Sensors and Systems Sector (ESSS), Baltimore, MD. The overall objective is to improve manufacturing effectiveness for epitaxial growth of silicon and silicon-germanium (Si-Ge) thin films on a silicon wafer. Growth takes place in the ASM Epsilon-1 chemical vapor deposition (CVD) reactor, a production tool currently in use at ESSS. Phase II project results include development of a new comprehensive process-equipment model capable of predicting gas flow, heat transfer, species transport, and chemical mechanisms in the reactor under a variety of process conditions and equipment settings. Applications of the model include prediction and control of deposition rate and thickness uniformity; studying sensitivity of deposition rate to process settings such as temperature, pressure, and flow rates; and reducing the use of consumables via purge flow optimization. The implications of various simulation results are discussed in terms of how they can be used to reduce costs and improve product quality, e.g., thickness uniformity of thin films. We demonstrate that achieving deposition uniformity requires some degree of temperature non-uniformity to compensate for the effects of other phenomena such as reactant depletion, gas heating and gas phase reactions, thermal diffusion of species, and flow patterns.

Author : Stuart Irvine
Publisher : John Wiley & Sons
Page : 582 pages
File Size : 35,36 MB
Release : 2019-10-07
Category : Technology & Engineering
ISBN : 1119313015

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Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Author : Gerald B. Stringfellow
Publisher : Elsevier
Page : 417 pages
File Size : 40,98 MB
Release : 2012-12-02
Category : Science
ISBN : 0323139175

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Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.

Author : Ruben Lieten
Publisher : ASP / VUBPRESS / UPA
Page : 175 pages
File Size : 47,46 MB
Release : 2009-09
Category : Technology & Engineering
ISBN : 9054874856

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A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.

Author : E. Lendvay
Publisher : Trans Tech Publications Ltd
Page : 979 pages
File Size : 38,45 MB
Release : 1991-01-01
Category : Technology & Engineering
ISBN : 3035739757

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Proceedings of the 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1990