[PDF] Ion Implantation And Synthesis Of Materials eBook

Author : Michael Nastasi
Publisher : Springer Science & Business Media
Page : 271 pages
File Size : 14,12 MB
Release : 2007-05-16
Category : Science
ISBN : 3540452982

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Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Author : Emanuele Rimini
Publisher : Springer Science & Business Media
Page : 400 pages
File Size : 36,62 MB
Release : 2013-11-27
Category : Technology & Engineering
ISBN : 1461522595

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Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.

Author : A. D. Pogrebnjak
Publisher : Nova Science Publishers
Page : 334 pages
File Size : 44,62 MB
Release : 2018-09
Category : SCIENCE
ISBN : 9781536139631

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"New results in the field of ion implantation from the experienced scientists from different countries are presented in this book. Influence of ion implantation on structure and properties of semi-conducting materials, instrumental steels and alloys, nanocomposite coatings, including multielement ones, titanium alloys with the shape memory effect and super-elasticity are discussed in detail within this book. New data on novel applications of ion implantation for the modification and testing (radiation hardness simulation) of memristive devices, as well as application of ion implantation of group V dopants in the MCT epilayer are presented in this book. Potential use of ion implantation for the synthesis of Ag nanoparticles in a thin Si layer for the development of thin-film solar cells fabrication technology is discussed. The effect of ion implantation on the physical and mechanical properties of the hard alloy plates based on tungsten carbide and a cobalt binder is described. A study of the effects of ion implantation on the phase composition and the structure of materials is presented. The role of defects in the formation of the phase composition of the ion-implanted materials, structural-phase transformations in metals after ion implantation is investigated. This book will be interesting for professionals in the study of solid state physics, nuclear physics, physics of semi-conductors and nanomaterials. It can also be useful for masters and PhD students, as well as for professionals researching the fabrication and investigation of protective materials with enhanced physical-mechanical and tribological properties, good biocompatibility and resistance to irradiation"--

Author : Bernd Schmidt
Publisher : Springer Science & Business Media
Page : 425 pages
File Size : 40,90 MB
Release : 2012-12-13
Category : Technology & Engineering
ISBN : 3211993568

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A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.

Author : Billy Crowder
Publisher : Springer Science & Business Media
Page : 644 pages
File Size : 45,72 MB
Release : 2013-03-13
Category : Science
ISBN : 146842064X

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During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.

Author : Michael Nastasi
Publisher : Cambridge University Press
Page : 572 pages
File Size : 40,94 MB
Release : 1996-03-29
Category : Science
ISBN : 052137376X

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Comprehensive guide to an important materials science technique for students and researchers.

Author : Ishaq Ahmad
Publisher : BoD – Books on Demand
Page : 154 pages
File Size : 14,22 MB
Release : 2017-06-14
Category : Science
ISBN : 9535132377

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Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.

Author : S. U. Campisano
Publisher : North Holland
Page : 308 pages
File Size : 40,96 MB
Release : 1992-01-01
Category : Technology & Engineering
ISBN : 9780444894182

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Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.

Author : Paolo Milani
Publisher : Springer Science & Business Media
Page : 195 pages
File Size : 25,38 MB
Release : 2012-12-06
Category : Science
ISBN : 3642598994

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This book supplies a systematic description of the preparation, characterization, and manipulation of cluster beams for the synthesis of nanocrystalline materials. It addresses all issues relevant to the realization of nanophase structures, providing an excellent introduction for scientists working in different fields. Particular emphasis is placed on using the technique for nanostructured materials and on explaining the role of cluster beams within the context of other experimental techniques in surface-science.