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InP and Related Compounds

Author : M O Manasreh
Publisher : CRC Press
Page : 870 pages
File Size : 46,40 MB
Release : 2000-08-08
Category : Technology & Engineering
ISBN : 9789056992644

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InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.

InP and Related Compounds

Author : M O Manasreh
Publisher : CRC Press
Page : 862 pages
File Size : 25,12 MB
Release : 2000-08-08
Category : Technology & Engineering
ISBN : 1482282984

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InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser d

Physical Properties of III-V Semiconductor Compounds

Author : Sadao Adachi
Publisher : John Wiley & Sons
Page : 342 pages
File Size : 23,59 MB
Release : 1992-11-10
Category : Science
ISBN : 9780471573296

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The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Optical Absorption of Impurities and Defects in Semiconducting Crystals

Author : Bernard Pajot
Publisher : Springer Science & Business Media
Page : 532 pages
File Size : 19,4 MB
Release : 2012-08-28
Category : Science
ISBN : 3642180183

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This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA

Author : Gerald B. Stringfellow
Publisher : CRC Press
Page : 680 pages
File Size : 25,7 MB
Release : 2020-11-25
Category : Science
ISBN : 100011225X

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Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.

Gallium Arsenide and Related Compounds 1988, Proceedings of the 15th INT Symposium, Atlanta, Georgia, September 1988

Author : J. S. Harris
Publisher : CRC Press
Page : 672 pages
File Size : 32,27 MB
Release : 1989
Category : Science
ISBN :

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These proceedings cover gallium arsenide and related compounds. They provide an overview of research into materials growth and characterization, discrete device physics and processing technology, epitaxial growth and ion implantation. For researchers in physics, materials science, electronics and electrical engineering.