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Direct Conversion RF Front-end Implementation for Ultra-wideband (UWB) and GSM/WCDMA Dual-band Applications in Silicon-based Technologies

Author : Yunseo Park
Publisher :
Page : pages
File Size : 48,25 MB
Release : 2005
Category : Linear integrated circuits
ISBN :

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This dissertation focuses on wideband circuit design and implementation issues up to 10GHz based on the direct conversion architecture in the CMOS and SiGe BiCMOS technologies. The dissertation consists of two parts: One, implementation of a RF front-end receiver for an ultra-wideband system and, two, implementation of a local oscillation (LO) signal for a GSM/WCDMA multiband application. For emerging ultra-wideband (UWB) applications, the key active components in the RF front-end receiver were designed and implemented in 0.18um SiGe BiCMOS process. The design of LNA, which is the critical circuit block for both systems, was analyzed in terms of noise, linearity and group delay variation over an extemely wide bandwidth. Measurements are demonstrated for an energy-thrifty UWB receiver based on an MB-OFDM system covering the full FCC-allowed UWB frequency range. For multiband applications such as a GSM/WCDMA dual-band application, the design of wideband VCO and various frequency generation blocks are investigated as alternatives for implementation of direct conversion architecture. In order to reduce DC-offset and LO pulling phenomena that degrade performance in a typical direct conversion scheme, an innovative fractional LO signal generator was implemented in a standard CMOS process. A simple analysis is provided for the loop dynamics and operating range of the design as well as for the measured results of the factional LO signal generator.

Silicon-Based RF Front-Ends for Ultra Wideband Radios

Author : Aminghasem Safarian
Publisher : Springer Science & Business Media
Page : 97 pages
File Size : 20,50 MB
Release : 2007-12-28
Category : Technology & Engineering
ISBN : 1402067224

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A comprehensive study of silicon-based distributed architectures in wideband circuits are presented in this book. Novel circuit architectures for ultra-wideband (UWB) wireless technologies are described. The book begins with an introduction of several transceiver architectures for UWB. The discussion then focuses on RF front-end of the UWB radio. Therefore, the book will be of interest to RF circuit designers and students.

Radio Frequency Circuits for Wireless Receiver Front-ends

Author : Chunyu Xin
Publisher :
Page : pages
File Size : 41,49 MB
Release : 2005
Category :
ISBN :

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The beginning of the 21st century sees great development and demands on wireless communication technologies. Wireless technologies, either based on a cable replacement or on a networked environment, penetrate our daily life more rapidly than ever. Low operational power, low cost, small form factor, and function diversity are the crucial requirements for a successful wireless product. The receiver's front-end circuits play an important role in faithfully recovering the information transmitted through the wireless channel. Bluetooth is a short-range cable replacement wireless technology. A Bluetooth receiver architecture was proposed and designed using a pure CMOS process. The front-end of the receiver consists of a low noise amplifier (LNA) and mixer. The intermediate frequency was chosen to be 2MHz to save battery power and alleviate the low frequency noise problem. A conventional LNA architecture was used for reliability. The mixer is a modified Gilbert-cell using the current bleeding technique to further reduce the low frequency noise. The front-end draws 10 mA current from a 3 V power supply, has a 8.5 dB noise figure, and a voltage gain of 25 dB and -9 dBm IIP3. A front-end for dual-mode receiver is also designed to explore the capability of a multi-standard application. The two standards are IEEE 802.11b and Bluetooth. They work together making the wireless experience more exciting. The front-end is designed using BiCMOS technology and incorporating a direct conversion receiver architecture. A number of circuit techniques are used in the front-end design to achieve optimal results. It consumes 13.6 mA from a 2.5 V power supply with a 5.5 dB noise figure, 33 dB voltage gain and -13 dBm IIP3. Besides the system level contributions, intensive studies were carried out on the development of quality LNA circuits. Based on the multi-gated LNA structure, a CMOS LNA structure using bipolar transistors to provide linearization is proposed. This LNA configuration can achieve comparable linearity to its CMOS multi-gated counterpart and work at a higher frequency with less power consumption. A LNA using an on-chip transformer source degeneration is proposed to realize input impedance matching. The possibility of a dual-band cellular application is studied. Finally, a study on ultra-wide band (UWB) LNA implementation is performed to explore the possibility and capability of CMOS technology on the latest UWB standard for multimedia applications.

Ultra Wideband

Author : Ranjit Gharpurey
Publisher : Springer Science & Business Media
Page : 207 pages
File Size : 43,22 MB
Release : 2008-03-06
Category : Technology & Engineering
ISBN : 0387692789

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This book is a compilation of chapters on various aspects of Ultra Wideband. The book includes chapters on Ultra Wideband transceiver implementations, pulse-based systems and one on the implementation for the WiMedia/MBOFDM approach. Another chapter discusses the implementation of the physical layer baseband, including the ADC and post-ADC processing required in the UWB system. Future advances such as multiantenna UWB solutions are also discussed.

Ultra Wideband

Author : Mohammad Abdul Matin
Publisher : BoD – Books on Demand
Page : 374 pages
File Size : 27,66 MB
Release : 2012-10-03
Category : Technology & Engineering
ISBN : 953510781X

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Ultra wideband (UWB) has advanced and merged as a technology, and many more people are aware of the potential for this exciting technology. The current UWB field is changing rapidly with new techniques and ideas where several issues are involved in developing the systems. Among UWB system design, the UWB RF transceiver and UWB antenna are the key components. Recently, a considerable amount of researches has been devoted to the development of the UWB RF transceiver and antenna for its enabling high data transmission rates and low power consumption. Our book attempts to present current and emerging trends in-research and development of UWB systems as well as future expectations.

Transmitter Systems and Bidirectional RF Front-End for Millimeter-Wave Communications

Author : Po-Yi Wu
Publisher :
Page : 135 pages
File Size : 12,19 MB
Release : 2015
Category :
ISBN :

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In this dissertation, millimeter-wave transmitter systems and a bidirectional transceiver front-end circuit are presented. To reach high data rate for next generation communication systems, complex modulation schemes such as QAM are necessary to take advantage of the signal bandwidth. In a transmitter system, higher-order QAM not only requires the PA to operate in linear region, while the output power and efficiency are maintained, but also requires the calibrations for the modulator to minimize the EVM. The rst portion of the dissertation presents the dual-band (Q-band/W-band) direct-conversion transmitter in 120-nm SiGe BiCMOS process. The dual-band feature is the use of the proposed transmission- line-based dual-band load on RF and LO amplifiers to allow the transmitter to operate at two distinct bands. Furthermore, this dual-band transmitter applies a new I/Q correction techniques, which calibrates amplitude and phase mismatch from analog baseband, and can achieve the sideband suppression ratio above 40 dBc at both Q-band and W-band. The EVM improvement can be clearly found from the constellation diagram at both bands. In addition, a high-efficiency PA must introduce nonlinear terms and degrade the EVM. Therefore, in addition to the I/Q mismatch, other errors from a transmitter such as LO leakage, AM-AM, AM-PM distortion and memory effects must be calibrated to improve the EVM. The second portion of this dissertation discusses the demonstrations of 45-GHz and 94-GHz transmitter systems with digital predistortion (DPD) to compromise the linearity/efficiency trade-off. The 45-GHz transmitter system uses the second portion SiGe modulator and a two-by-two PA/antenna array, which PAs are implemented in 45-nm SOI CMOS process. The digital signal is programmed in an FPGA-based processor, so an all silicon-based solution is verified at 45 GHz (Q-band). The 94-GHz transmitter system uses a two-step frequency conversion architecture to send the modulated data to 94-GHz band and a two-by-four PA/antenna array, which is implemented in 45-nm SOI CMOS process. The nonlinearities and errors of the transmitted data are significantly predistorted/calibrated and the EVM is greatly improved by DPD. The third portion of this dissertation presents a 71 to 86-GHz (E-band) bidirectional transceiver front-end circuit implemented in 90-nm SiGe BiCMOS process. The time-division duplex architecture avoids transmit/receive switches through the use of transistor biasing in the signal path to minimize high-frequency loss. The low-noise amplifier (LNA) and power amplifier (PA) are combined into a novel PA/LNA circuit, which alleviates the parasitic loading of each circuit. In transmit mode, the bidirectional transceiver transmits a maximum saturated power of 11 dBm at 78 GHz with a 3-dB bandwidth from 71 to 86 GHz. In receive mode, the maximum 30.6-dB conversion gain and the minimum 6.6-dB noise figure are measured at 73 GHz.

Ultra-wideband RF System Engineering

Author : Thomas Zwick
Publisher : Cambridge University Press
Page : 207 pages
File Size : 30,11 MB
Release : 2013-10-03
Category : Technology & Engineering
ISBN : 1107512042

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This comprehensive summary of the state of the art in Ultra Wideband (UWB) system engineering takes you through all aspects of UWB design, from components through the propagation channel to system engineering aspects. Mathematical tools and basics are covered, allowing for a complete characterisation and description of the UWB scenario, in both the time and the frequency domains. UWB MMICs, antennas, antenna arrays, and filters are described, as well as quality measurement parameters and design methods for specific applications. The UWB propagation channel is discussed, including a complete mathematical description together with modeling tools. A system analysis is offered, addressing both radio and radar systems, and techniques for optimization and calibration. Finally, an overview of future applications of UWB technology is presented. Ideal for scientists as well as RF system and component engineers working in short range wireless technologies.

FM-UWB Transceivers for Autonomous Wireless Systems

Author : Nitz Saputra
Publisher : CRC Press
Page : 199 pages
File Size : 25,3 MB
Release : 2022-09-01
Category : Technology & Engineering
ISBN : 100079931X

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Significant research effort has been devoted to the study and realization of autonomous wireless systems for wireless sensor and personal-area networking, the internet of things, and machine-to-machine communications. Low-power RF integrated circuits, an energy harvester and a power management circuit are fundamental elements of these systems. An FM-UWB Transceiver for Autonomous Wireless Systems presents state-of-the-art developments in low-power FM-UWB transceiver realizations. The design, performance and implementation of prototype transceivers in CMOS technology are presented. A working hardware realization of an autonomous node that includes a prototype power management circuit is also proposed and detailed in this book.Technical topics include: Low-complexity FM-UWB modulation schemesLow-power FM-UWB transceiver prototypes in CMOS technologyCMOS on-chip digital calibration techniquesSolar power harvester and power management in CMOS for low-power RF circuitsAn FM-UWB Transceiver for Autonomous Wireless Systems is an ideal text and reference for engineers working in wireless communication industries, as well as academic staff and graduate students engaged in electrical engineering and communication systems research.

Silicon-based Millimeter-wave Front-end Development for Multi-gigabit Wireless Applications

Author : Saikat Sarkar
Publisher :
Page : pages
File Size : 13,65 MB
Release : 2007
Category : Millimeter wave communication systems
ISBN :

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With rapid advances in semiconductor technologies and packaging schemes, wireless products have become more versatile, portable, inexpensive, and user friendly over last few decades. However, the ever-growing demand of consumers to share information efficiently at higher speeds requires higher data rates, increased functionality, lower cost, and more reliability. The 60-GHz-frequency band, with 7 GHz license-free bandwidth addresses, such demands, and promises a low-cost multi-Gbps wireless transmission with a power budget in the order of 100 mW. This dissertation presents the systematic development of key building blocks and integrated 60-GHz-receiver solutions. Two different approaches are investigated and implemented in this dissertation: (1) low-cost SiGe-based direct-conversion low-power receiver front-end utilizing gain-boosting techniques in the front-end low-noise amplifier, and (2) CMOS-based heterodyne receiver front-end suitable for high-performance single-chip 60 GHz transceiver solution. The ASK receiver chip, implemented using 0.18?m SiGe, presents a complete antenna-to-baseband multi-gigabit 60 GHz solution with the lowest reported power budget (25 pJ/bit) to date. The subharmonic direct conversion front-end, implemented using 0.18?m SiGe, presents excellent conversion properties with a 4 GHz DSB RF bandwidth. On the other hand, the CMOS heterodyne implementation of the 60 GHz front-end receiver, targeted towards a robust, single-chip, high-performance, low-power, and integrated 60 GHz transceiver solution, presents the most wideband receiver front-end reported to date. Finally, different multi-band and tunable millimeter-wave circuits are presented towards the future implementation of cognitive and multi-band millimeter-wave radio.

Silicon-based RF/MMW Integrated Circuits for GBPS Wireless Communication, Automotive Radar and Imaging

Author : Lei Zhou
Publisher :
Page : 119 pages
File Size : 26,60 MB
Release : 2010
Category :
ISBN : 9781109675092

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Silicon-based integrated circuits used in the wireless technology have a great impact on our world. Moreover, such trend is continuing with ever-decreasing size of transistors. High speed wireless communication links are expected to become popular within most mobile devices in the next few years. On the other side, millimeter-wave (MMW) frequency has always been the terrain dominated by III-V compound semiconductor technology. However, the cost and low manufacturing yield of such systems prevent its commercialized use for new exciting applications, such as automotive intelligent system and imaging for public security and medical application. As the technology scaling in silicon, the increasing process ft and higher level of integration are promising to build lower cost, smaller sized MMW systems. This dissertation is following the goal to design and implement several prototype silicon-based integrated circuits at different technology nodes to address the key challenges faced by silicon both in circuit- and system-levels, therefore pave the path towards the fully-integrated systems for those emerging applications. A carrier-less RF-correlation-based impulse radio ultra-wideband (IR-UWB) transceiver front-end designed in 130nm CMOS process is presented. Timing synchronization and coherent demodulation are implemented directly in the RF domain. In order to solve the extremely large dynamic requirement of delay for RF synchronization, a template-based delay generation scheme is proposed and a 25ps timing resolution is achieved with a delay range of 500ps by a two-step timing synchronizer. The TRX achieves a maximum data rate of 2Gbps, while requiring only 51.5pJ/pulse in the TX mode and 72.9pJ/pulse in the RX mode. Finally a W-band receiver chipset for passive millimeter-wave imaging in a 65-nm standard CMOS technology is presented. The receiver design addresses the high 1/f noise issue in the advanced CMOS technology. An LO generation scheme is proposed to make it suitable for use in multi-pixel systems. In addition, the noise performance of the receiver is further improved by optimum biasing of transistors of the detector to achieve the highest responsivity and lowest NEP. The receiver chipset achieves a Dicke NETD of 0.52K, demonstrating the potential of CMOS for future low-cost portable passive imaging cameras.